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| Hauptseite > Publikationsdatenbank > Conditions for spin-gapless semiconducting behavior in Mn2CoAl inverse Heusler compound > print |
| Hauptseite > Publikationsdatenbank > Conditions for spin-gapless semiconducting behavior in Mn2CoAl inverse Heusler compound > print |
| 001 | 155921 | ||
| 005 | 20210129214147.0 | ||
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| 037 | _ | _ | |a FZJ-2014-04851 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Galanakis, I. |0 P:(DE-HGF)0 |b 0 |e Corresponding Author |
| 245 | _ | _ | |a Conditions for spin-gapless semiconducting behavior in Mn2CoAl inverse Heusler compound |
| 260 | _ | _ | |a Melville, NY |c 2014 |b American Institute of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a Employing ab initio electronic structure calculations, we investigate the conditions for spin-gapless semiconducting (SGS) behavior in the inverse Mn2 CoAl Heusler compound. We show that tetragonalization of the lattice, which can occur during films growth, keeps the SGS character of the perfect cubic compound. On the contrary, atomic swaps even between sites with different local symmetry destroy the SGS character giving rise to a half-metallic state. Furthermore, the occurrence of Co-surplus leads also to half-metallicity. Thus, we propose that in order to achieve SGS behavior during the growth of Mn2 CoAl (and similar SGS Heusler compounds) thin films, one should minimize the occurrence of defects, while small deformations of the lattice, due to the lattice mismatch with the substrate, do not play a crucial role. |
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| 700 | 1 | _ | |a Blügel, S. |0 P:(DE-Juel1)130548 |b 3 |u fzj |
| 773 | _ | _ | |a 10.1063/1.4867917 |g Vol. 115, no. 9, p. 093908 - |0 PERI:(DE-600)1476463-5 |n 9 |p 093908 |t Journal of applied physics |v 115 |y 2014 |x 1089-7550 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/155921/files/FZJ-2014-04851.pdf |y OpenAccess |
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