000156101 001__ 156101
000156101 005__ 20210129214209.0
000156101 0247_ $$2doi$$a10.1021/nl501350v
000156101 0247_ $$2ISSN$$a1530-6992
000156101 0247_ $$2ISSN$$a1530-6984
000156101 0247_ $$2WOS$$aWOS:000341544500009
000156101 0247_ $$2altmetric$$aaltmetric:3006968
000156101 0247_ $$2pmid$$apmid:25118624
000156101 037__ $$aFZJ-2014-04975
000156101 041__ $$aEnglish
000156101 082__ $$a540
000156101 1001_ $$0P:(DE-HGF)0$$aGünel, H. Y.$$b0$$eCorresponding Author
000156101 245__ $$aCrossover from Josephson Effect to Single Interface Andreev Reflection in Asymmetric Superconductor/Nanowire Junctions
000156101 260__ $$aWashington, DC$$bACS Publ.$$c2014
000156101 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1412249135_24560
000156101 3367_ $$2DataCite$$aOutput Types/Journal article
000156101 3367_ $$00$$2EndNote$$aJournal Article
000156101 3367_ $$2BibTeX$$aARTICLE
000156101 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000156101 3367_ $$2DRIVER$$aarticle
000156101 520__ $$aWe report on the fabrication and characterization of symmetric nanowire-based Josephson junctions, that is, Al- and Nb-based junctions, and asymmetric junctions employing superconducting Al and Nb. In the symmetric junctions, a clear and pronounced Josephson supercurrent is observed. These samples also show clear signatures of subharmonic gap structures. At zero magnetic field, a Josephson coupling is found for theasymmetric Al/InAs-nanowire/Nb junctions as well. By applying a magnetic field above the criticalfield of Al or by raising the temperature above the critical temperature of Al the junction can be switched to an effective singleinterface superconductor/nanowire structure. In this regime, a pronounced zero-bias conductance peak due to reflectionless tunneling has been observed.
000156101 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000156101 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000156101 7001_ $$0P:(DE-HGF)0$$aBorgwardt, N.$$b1
000156101 7001_ $$0P:(DE-HGF)0$$aBatov, I. E.$$b2
000156101 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b3$$ufzj
000156101 7001_ $$0P:(DE-HGF)0$$aSladek, Kamil$$b4
000156101 7001_ $$0P:(DE-Juel1)128715$$aPanaitov, Gregory$$b5$$ufzj
000156101 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b6$$ufzj
000156101 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b7$$ufzj
000156101 773__ $$0PERI:(DE-600)2048866-X$$a10.1021/nl501350v$$gp. 140820093127003 -$$p4977-4981$$tNano letters$$v14$$x1530-6992$$y2014
000156101 8564_ $$uhttp://pubs.acs.org/doi/abs/10.1021/nl501350v
000156101 8564_ $$uhttps://juser.fz-juelich.de/record/156101/files/FZJ-2014-04975.pdf$$yRestricted
000156101 909CO $$ooai:juser.fz-juelich.de:156101$$pVDB
000156101 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125593$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000156101 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128715$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000156101 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000156101 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128634$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000156101 9132_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bPOF III$$lKey Technologies$$vFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$x0
000156101 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000156101 9141_ $$y2014
000156101 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000156101 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000156101 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000156101 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000156101 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000156101 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000156101 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000156101 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000156101 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000156101 915__ $$0StatID:(DE-HGF)1040$$2StatID$$aDBCoverage$$bZoological Record
000156101 920__ $$lyes
000156101 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000156101 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000156101 980__ $$ajournal
000156101 980__ $$aVDB
000156101 980__ $$aI:(DE-Juel1)PGI-9-20110106
000156101 980__ $$aI:(DE-82)080009_20140620
000156101 980__ $$aUNRESTRICTED