000156276 001__ 156276
000156276 005__ 20210129214231.0
000156276 0247_ $$2doi$$a10.1103/PhysRevLett.113.096601
000156276 0247_ $$2ISSN$$a0031-9007
000156276 0247_ $$2ISSN$$a1079-7114
000156276 0247_ $$2WOS$$aWOS:000341270600008
000156276 0247_ $$2Handle$$a2128/9114
000156276 0247_ $$2altmetric$$aaltmetric:2624361
000156276 037__ $$aFZJ-2014-05067
000156276 041__ $$aEnglish
000156276 082__ $$a550
000156276 1001_ $$0P:(DE-HGF)0$$aOlbrich, P.$$b0$$eCorresponding Author
000156276 245__ $$aRoom-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown $Sb_2Te_3$- and $Bi_2Te_3$-Based Topological Insulators
000156276 260__ $$aCollege Park, Md.$$bAPS$$c2014
000156276 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1412600715_6118
000156276 3367_ $$2DataCite$$aOutput Types/Journal article
000156276 3367_ $$00$$2EndNote$$aJournal Article
000156276 3367_ $$2BibTeX$$aARTICLE
000156276 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000156276 3367_ $$2DRIVER$$aarticle
000156276 520__ $$aWe report on the observation of photogalvanic effects in epitaxially grown Sb2Te3 and Bi2Te3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac fermions driven back and forth by the terahertz electric field results in a dc electric current. Because of the “symmetry filtration” the dc current is generated by the surface electrons only and provides an optoelectronic access to probe the electron transport in TI, surface domains orientation, and details of electron scattering in 3D TI even at room temperature.
000156276 536__ $$0G:(DE-HGF)POF2-422$$a422 - Spin-based and quantum information (POF2-422)$$cPOF2-422$$fPOF II$$x0
000156276 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000156276 7001_ $$0P:(DE-HGF)0$$aGolub, L. E.$$b1
000156276 7001_ $$0P:(DE-HGF)0$$aHerrmann, T.$$b2
000156276 7001_ $$0P:(DE-HGF)0$$aDanilov, S. N.$$b3
000156276 7001_ $$0P:(DE-HGF)0$$aPlank, H.$$b4
000156276 7001_ $$0P:(DE-HGF)0$$aBel’kov, V. V.$$b5
000156276 7001_ $$0P:(DE-Juel1)128617$$aMussler, G.$$b6$$ufzj
000156276 7001_ $$0P:(DE-Juel1)145705$$aWeyrich, Ch.$$b7$$ufzj
000156276 7001_ $$0P:(DE-Juel1)130948$$aSchneider, Claus Michael$$b8$$ufzj
000156276 7001_ $$0P:(DE-Juel1)145467$$aKampmeier, J.$$b9$$ufzj
000156276 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, D.$$b10$$ufzj
000156276 7001_ $$0P:(DE-Juel1)130895$$aPlucinski, L.$$b11$$ufzj
000156276 7001_ $$0P:(DE-Juel1)145534$$aEschbach, M.$$b12$$ufzj
000156276 7001_ $$0P:(DE-HGF)0$$aGanichev, S. D.$$b13
000156276 773__ $$0PERI:(DE-600)1472655-5$$a10.1103/PhysRevLett.113.096601$$gVol. 113, no. 9, p. 096601$$n9$$p096601$$tPhysical review letters$$v113$$x1079-7114$$y2014
000156276 8564_ $$uhttp://journals.aps.org/prl/abstract/10.1103/PhysRevLett.113.096601
000156276 8564_ $$uhttps://juser.fz-juelich.de/record/156276/files/FZJ-2014-05067.pdf$$yOpenAccess
000156276 909CO $$ooai:juser.fz-juelich.de:156276$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000156276 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128617$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000156276 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145705$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000156276 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130948$$aForschungszentrum Jülich GmbH$$b8$$kFZJ
000156276 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145467$$aForschungszentrum Jülich GmbH$$b9$$kFZJ
000156276 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b10$$kFZJ
000156276 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130895$$aForschungszentrum Jülich GmbH$$b11$$kFZJ
000156276 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145534$$aForschungszentrum Jülich GmbH$$b12$$kFZJ
000156276 9132_ $$0G:(DE-HGF)POF3-522$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bPOF III$$lKey Technologies$$vFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$x0
000156276 9131_ $$0G:(DE-HGF)POF2-422$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vSpin-based and quantum information$$x0
000156276 9141_ $$y2014
000156276 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000156276 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000156276 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000156276 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000156276 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000156276 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000156276 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000156276 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000156276 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000156276 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000156276 915__ $$0StatID:(DE-HGF)1020$$2StatID$$aDBCoverage$$bCurrent Contents - Social and Behavioral Sciences
000156276 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000156276 915__ $$0LIC:(DE-HGF)APS-112012$$2HGFVOC$$aAmerican Physical Society Transfer of Copyright Agreement
000156276 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x0
000156276 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x1
000156276 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x2
000156276 9801_ $$aFullTexts
000156276 980__ $$ajournal
000156276 980__ $$aVDB
000156276 980__ $$aUNRESTRICTED
000156276 980__ $$aI:(DE-82)080009_20140620
000156276 980__ $$aI:(DE-Juel1)PGI-6-20110106
000156276 980__ $$aI:(DE-Juel1)PGI-9-20110106
000156276 981__ $$aI:(DE-Juel1)PGI-6-20110106
000156276 981__ $$aI:(DE-Juel1)PGI-9-20110106