Hauptseite > Publikationsdatenbank > Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown $Sb_2Te_3$- and $Bi_2Te_3$-Based Topological Insulators > print

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005     20210129214231.0
024 7 _ |a 10.1103/PhysRevLett.113.096601
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037 _ _ |a FZJ-2014-05067
041 _ _ |a English
082 _ _ |a 550
100 1 _ |a Olbrich, P.
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245 _ _ |a Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown $Sb_2Te_3$- and $Bi_2Te_3$-Based Topological Insulators
260 _ _ |a College Park, Md.
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336 7 _ |a Journal Article
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520 _ _ |a We report on the observation of photogalvanic effects in epitaxially grown Sb2Te3 and Bi2Te3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac fermions driven back and forth by the terahertz electric field results in a dc electric current. Because of the “symmetry filtration” the dc current is generated by the surface electrons only and provides an optoelectronic access to probe the electron transport in TI, surface domains orientation, and details of electron scattering in 3D TI even at room temperature.
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700 1 _ |a Golub, L. E.
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700 1 _ |a Herrmann, T.
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700 1 _ |a Danilov, S. N.
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700 1 _ |a Plank, H.
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700 1 _ |a Bel’kov, V. V.
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700 1 _ |a Mussler, G.
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700 1 _ |a Weyrich, Ch.
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700 1 _ |a Schneider, Claus Michael
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700 1 _ |a Kampmeier, J.
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700 1 _ |a Eschbach, M.
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700 1 _ |a Ganichev, S. D.
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773 _ _ |a 10.1103/PhysRevLett.113.096601
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|t Physical review letters
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856 4 _ |u http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.113.096601
856 4 _ |u https://juser.fz-juelich.de/record/156276/files/FZJ-2014-05067.pdf
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