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000156338 005__ 20210129214235.0
000156338 037__ $$aFZJ-2014-05102
000156338 041__ $$aEnglish
000156338 1001_ $$0P:(DE-HGF)0$$aWermuth, Joachim$$b0$$eCorresponding Author$$gmale
000156338 245__ $$aFabrication and characterization of SiGe and SiGeSn tunnel diodes$$f2014-01-28
000156338 260__ $$c2014
000156338 300__ $$a54 p.
000156338 3367_ $$0PUB:(DE-HGF)10$$2PUB:(DE-HGF)$$aDiploma Thesis$$bdiploma$$mdiploma$$s1413208248_8770
000156338 3367_ $$02$$2EndNote$$aThesis
000156338 3367_ $$2DataCite$$aOutput Types/Supervised Student Publication
000156338 3367_ $$2DRIVER$$amasterThesis
000156338 3367_ $$2ORCID$$aSUPERVISED_STUDENT_PUBLICATION
000156338 3367_ $$2BibTeX$$aMASTERSTHESIS
000156338 502__ $$aRWTH Aachen, Diplomarbeit, 2014$$bDipl.$$cRWTH Aachen$$d2014
000156338 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000156338 650_7 $$0V:(DE-588b)4276536-5$$2GND$$aUnveröffentlichte Hochschulschrift$$xDiplomarbeit
000156338 773__ $$y2014
000156338 909CO $$ooai:juser.fz-juelich.de:156338$$pVDB
000156338 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000156338 9132_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bPOF III$$lKey Technologies$$vFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$x0
000156338 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000156338 9141_ $$y2014
000156338 920__ $$lyes
000156338 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000156338 980__ $$adiploma
000156338 980__ $$aVDB
000156338 980__ $$aI:(DE-Juel1)PGI-9-20110106
000156338 980__ $$aUNRESTRICTED