Hauptseite > Publikationsdatenbank > Thermische Stabilität und Metallisierung von GeSn und SiGeSn Gruppe-IV Halbleitermaterialien > print

001     156340
005     20210129214235.0
037 _ _ |a FZJ-2014-05104
041 _ _ |a German
100 1 _ |a Troitsch, René
|0 P:(DE-HGF)0
|b 0
|e Corresponding Author
|g male
245 _ _ |a Thermische Stabilität und Metallisierung von GeSn und SiGeSn Gruppe-IV Halbleitermaterialien
|f 2014-03-31
260 _ _ |c 2014
300 _ _ |a 76p.
336 7 _ |a Diploma Thesis
|b diploma
|m diploma
|0 PUB:(DE-HGF)10
|s 1413208176_8769
|2 PUB:(DE-HGF)
336 7 _ |a Thesis
|0 2
|2 EndNote
336 7 _ |a Output Types/Supervised Student Publication
|2 DataCite
336 7 _ |a masterThesis
|2 DRIVER
336 7 _ |a SUPERVISED_STUDENT_PUBLICATION
|2 ORCID
336 7 _ |a MASTERSTHESIS
|2 BibTeX
502 _ _ |a RWTH Aachen, Diplomarbeit, 2014
|c RWTH Aachen
|b Dipl.
|d 2014
536 _ _ |a 421 - Frontiers of charge based Electronics (POF2-421)
|0 G:(DE-HGF)POF2-421
|c POF2-421
|f POF II
|x 0
650 _ 7 |a Unveröffentlichte Hochschulschrift
|0 V:(DE-588b)4276536-5
|2 GND
|x Diplomarbeit
773 _ _ |y 2014
909 C O |o oai:juser.fz-juelich.de:156340
|p VDB
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-HGF)0
913 2 _ |a DE-HGF
|b POF III
|l Key Technologies
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|2 G:(DE-HGF)POF3-500
|v Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|x 0
913 1 _ |a DE-HGF
|b Schlüsseltechnologien
|1 G:(DE-HGF)POF2-420
|0 G:(DE-HGF)POF2-421
|2 G:(DE-HGF)POF2-400
|v Frontiers of charge based Electronics
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF2
|l Grundlagen zukünftiger Informationstechnologien
914 1 _ |y 2014
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
980 _ _ |a diploma
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a UNRESTRICTED

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21