TY  - JOUR
AU  - Jin, Lei
AU  - Jia, Chun-Lin
AU  - Vrejoiu, I.
TI  - Engineering 180° ferroelectric domains in epitaxial PbTiO3 thin films by varying the thickness of the underlying (La,Sr)MnO3 layer
JO  - Applied physics letters
VL  - 105
SN  - 1077-3118
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2014-05260
SP  - 132903
PY  - 2014
AB  - Epitaxial ferroelectric thin films of PbTiO3 (PTO) grown on top of nominally La0.7Sr0.3MnO3 (LSMO) submicron hillocks on Nb-doped SrTiO3 (100) substrate were investigated by means of scanning transmission electron microscopy. 180° ferroelectric domains were observed in the c -axis oriented PTO films. The formation and configuration of ferroelectric domains and domain walls were found to exhibit strong correlation with the thickness of the underlying LSMO hillocks. The domain walls start at the locations of the hillocks where the LSMO layer has a thickness of about 3 nm. Our results demonstrate that controlling the thickness variation (shape) of the LSMO hillocks can manipulate the position and density of the ferroelectric domain walls, which are considered to be the active elements for future nanoelectronics.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000343031700048
DO  - DOI:10.1063/1.4897144
UR  - https://juser.fz-juelich.de/record/156558
ER  -