% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Jin:156558,
author = {Jin, Lei and Jia, Chun-Lin and Vrejoiu, I.},
title = {{E}ngineering 180° ferroelectric domains in epitaxial
{P}b{T}i{O}3 thin films by varying the thickness of the
underlying ({L}a,{S}r){M}n{O}3 layer},
journal = {Applied physics letters},
volume = {105},
issn = {1077-3118},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {FZJ-2014-05260},
pages = {132903},
year = {2014},
abstract = {Epitaxial ferroelectric thin films of PbTiO3 (PTO) grown on
top of nominally La0.7Sr0.3MnO3 (LSMO) submicron hillocks on
Nb-doped SrTiO3 (100) substrate were investigated by means
of scanning transmission electron microscopy. 180°
ferroelectric domains were observed in the c -axis oriented
PTO films. The formation and configuration of ferroelectric
domains and domain walls were found to exhibit strong
correlation with the thickness of the underlying LSMO
hillocks. The domain walls start at the locations of the
hillocks where the LSMO layer has a thickness of about
3 nm. Our results demonstrate that controlling the
thickness variation (shape) of the LSMO hillocks can
manipulate the position and density of the ferroelectric
domain walls, which are considered to be the active elements
for future nanoelectronics.},
cin = {PGI-5},
ddc = {530},
cid = {I:(DE-Juel1)PGI-5-20110106},
pnm = {424 - Exploratory materials and phenomena (POF2-424)},
pid = {G:(DE-HGF)POF2-424},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000343031700048},
doi = {10.1063/1.4897144},
url = {https://juser.fz-juelich.de/record/156558},
}