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000015831 084__ $$2WoS$$aCrystallography
000015831 084__ $$2WoS$$aPhysics, Condensed Matter
000015831 1001_ $$0P:(DE-HGF)0$$aIelmini, D.$$b0
000015831 245__ $$aThermochemical resistive switching: materials, mechanisms, and scaling projections
000015831 260__ $$aLondon [u.a.]$$bTaylor & Francis$$c2011
000015831 300__ $$a570 - 602
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000015831 440_0 $$08102$$aPhase Transitions$$v84$$x0141-1594$$y7
000015831 500__ $$3POF3_Assignment on 2016-02-29
000015831 500__ $$aThe support of and fruitful discussion with R. Weng, C. Kuegeler, C. Cagli, F. Nardi, and A. L. Lacaita are gratefully acknowledged. Part of the study was supported by the EMMA project. D. I. gratefully acknowledges Fondazione Cariplo (Grant 2010-0500) for financial support.
000015831 520__ $$aIn this article, resistive switching based on the thermochemical mechanism (TCM) is reviewed. This mechanism is observed when thermochemical redox processes dominate over electrochemical processes. As the switching is based on thermal effects, it is inherently unipolar, i.e., the transitions between the resistive states can be induced by the same bias voltage polarity. NiO has emerged as a "model material" for resistive switching based on the TCM effect and the discussion of the resistance states and the switching processes are focused on this material with the appropriate electrodes, mainly Pt. Unipolar switching is unambiguously filamentary. Conductive filaments are formed during the electroforming process needed prior to memory switching. The SET operation is interpreted as a sequence of threshold switching and subsequent Joule heating which triggers local redox reactions in which oxygen deficient NiO and, if the amount of released oxygen exceeds a certain amount, also metallic Ni will form. The RESET transition can be described as a thermally activated solid-state process resulting in a local decrease of the metallic Ni species. In terms of operation and reliability, a trade-off between RESET current reduction and retention was experimentally found. This is due to the decreasing long-term stability of the filaments with decreasing size. In addition, the scaling projection of a TCM-based memory technology with NiO is directly related to RESET currents and the availability of appropriate select devices.
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000015831 65320 $$2Author$$aresistive switching
000015831 65320 $$2Author$$athermochemical switching mechanism
000015831 65320 $$2Author$$amemory device scaling
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000015831 7001_ $$0P:(DE-Juel1)130570$$aBruchhaus, R.$$b1$$uFZJ
000015831 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b2$$uFZJ
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000015831 8567_ $$uhttp://dx.doi.org/10.1080/01411594.2011.561478
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