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@ARTICLE{Ielmini:15831,
      author       = {Ielmini, D. and Bruchhaus, R. and Waser, R.},
      title        = {{T}hermochemical resistive switching: materials,
                      mechanisms, and scaling projections},
      journal      = {Phase transitions},
      volume       = {84},
      issn         = {0141-1594},
      address      = {London [u.a.]},
      publisher    = {Taylor $\&$ Francis},
      reportid     = {PreJuSER-15831},
      pages        = {570 - 602},
      year         = {2011},
      note         = {The support of and fruitful discussion with R. Weng, C.
                      Kuegeler, C. Cagli, F. Nardi, and A. L. Lacaita are
                      gratefully acknowledged. Part of the study was supported by
                      the EMMA project. D. I. gratefully acknowledges Fondazione
                      Cariplo (Grant 2010-0500) for financial support.},
      abstract     = {In this article, resistive switching based on the
                      thermochemical mechanism (TCM) is reviewed. This mechanism
                      is observed when thermochemical redox processes dominate
                      over electrochemical processes. As the switching is based on
                      thermal effects, it is inherently unipolar, i.e., the
                      transitions between the resistive states can be induced by
                      the same bias voltage polarity. NiO has emerged as a "model
                      material" for resistive switching based on the TCM effect
                      and the discussion of the resistance states and the
                      switching processes are focused on this material with the
                      appropriate electrodes, mainly Pt. Unipolar switching is
                      unambiguously filamentary. Conductive filaments are formed
                      during the electroforming process needed prior to memory
                      switching. The SET operation is interpreted as a sequence of
                      threshold switching and subsequent Joule heating which
                      triggers local redox reactions in which oxygen deficient NiO
                      and, if the amount of released oxygen exceeds a certain
                      amount, also metallic Ni will form. The RESET transition can
                      be described as a thermally activated solid-state process
                      resulting in a local decrease of the metallic Ni species. In
                      terms of operation and reliability, a trade-off between
                      RESET current reduction and retention was experimentally
                      found. This is due to the decreasing long-term stability of
                      the filaments with decreasing size. In addition, the scaling
                      projection of a TCM-based memory technology with NiO is
                      directly related to RESET currents and the availability of
                      appropriate select devices.},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-7},
      ddc          = {540},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Crystallography / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000299703000002},
      doi          = {10.1080/01411594.2011.561478},
      url          = {https://juser.fz-juelich.de/record/15831},
}