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000015832 0247_ $$2DOI$$a10.1109/LED.2011.2127439
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000015832 084__ $$2WoS$$aEngineering, Electrical & Electronic
000015832 1001_ $$0P:(DE-Juel1)VDB75720$$aRosezin, R.$$b0$$uFZJ
000015832 245__ $$aCrossbar logic using bipolar and complementary resistive switches
000015832 260__ $$aNew York, NY$$bIEEE$$c2011
000015832 300__ $$a710 - 712
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000015832 440_0 $$02464$$aIEEE Electron Device Letters$$v32$$x0741-3106$$y6
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000015832 520__ $$aMemristive switches are promising devices for future nonvolatile nanocrossbar memory devices. In particular, complementary resistive switches (CRSs) are the key enabler for passive crossbar array implementation solving the sneak path obstacle. To provide logic along with memory functionality, "material implication" (IMP) was suggested as the basic logic operation for bipolar resistive switches. Here, we show that every bipolar resistive switch as well as CRSs can be considered as an elementary IMP logic unit and can systematically be understood in terms of finite-state machines, i.e., either a Moore or a Mealy machine. We prove our assumptions by measurements, which make the IMP capability evident. Local fusion of logic and memory functions in crossbar arrays becomes feasible for CRS arrays, particularly for the suggested stacked topology, which offers even more common Boolean logic operations such as AND and NOR.
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000015832 65320 $$2Author$$aBipolar resistive switch
000015832 65320 $$2Author$$acomplementary resistive switch (CRS)
000015832 65320 $$2Author$$acrossbar arrays
000015832 65320 $$2Author$$alogic
000015832 65320 $$2Author$$amemory devices
000015832 65320 $$2Author$$anonvolatile memory
000015832 65320 $$2Author$$aresistive switching
000015832 7001_ $$0P:(DE-Juel1)VDB68381$$aLinn, E.$$b1$$uFZJ
000015832 7001_ $$0P:(DE-Juel1)VDB15125$$aKügeler, C.$$b2$$uFZJ
000015832 7001_ $$0P:(DE-Juel1)130570$$aBruchhaus, R.$$b3$$uFZJ
000015832 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b4$$uFZJ
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000015832 8567_ $$uhttp://dx.doi.org/10.1109/LED.2011.2127439
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