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@ARTICLE{Rosezin:15832,
author = {Rosezin, R. and Linn, E. and Kügeler, C. and Bruchhaus, R.
and Waser, R.},
title = {{C}rossbar logic using bipolar and complementary resistive
switches},
journal = {IEEE Electron Device Letters},
volume = {32},
issn = {0741-3106},
address = {New York, NY},
publisher = {IEEE},
reportid = {PreJuSER-15832},
pages = {710 - 712},
year = {2011},
note = {Record converted from VDB: 12.11.2012},
abstract = {Memristive switches are promising devices for future
nonvolatile nanocrossbar memory devices. In particular,
complementary resistive switches (CRSs) are the key enabler
for passive crossbar array implementation solving the sneak
path obstacle. To provide logic along with memory
functionality, "material implication" (IMP) was suggested as
the basic logic operation for bipolar resistive switches.
Here, we show that every bipolar resistive switch as well as
CRSs can be considered as an elementary IMP logic unit and
can systematically be understood in terms of finite-state
machines, i.e., either a Moore or a Mealy machine. We prove
our assumptions by measurements, which make the IMP
capability evident. Local fusion of logic and memory
functions in crossbar arrays becomes feasible for CRS
arrays, particularly for the suggested stacked topology,
which offers even more common Boolean logic operations such
as AND and NOR.},
keywords = {J (WoSType)},
cin = {JARA-FIT / PGI-7},
ddc = {620},
cid = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Engineering, Electrical $\&$ Electronic},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000290994800004},
doi = {10.1109/LED.2011.2127439},
url = {https://juser.fz-juelich.de/record/15832},
}