Hauptseite > Publikationsdatenbank > 20nm gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain > EndNote Text |
%0 Conference Paper %A Knoll, L. %A Zhao, Q.T. %A Luptak, R. %A Trellenkamp, S. %A Bourdelle, K.K. %A Mantl, S. %T 20nm gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain %M PreJuSER-15897 %D 2011 %Z Record converted from VDB: 12.11.2012 %< 12 International Conference on Ultimate Integration on Silicon (ULIS) Y2 14 Mar 2011 M2 Cork, Ireland, %F PUB:(DE-HGF)6 %9 Conference Presentation %U https://juser.fz-juelich.de/record/15897