%0 Journal Article
%A Hermes, C.
%A Wimmer, M.
%A Menzel, S.
%A Fleck, K.
%A Gruns, G.
%A Salinga, M.
%A Böttger, U.
%A Bruchhaus, R.
%A Schmitz-Kempen, T.
%A Wuttig, M.
%A Waser, R.
%T Analysis of transient currents during ultrafast switching of TiO2 nanocrossbar devices
%J IEEE Electron Device Letters
%V 32
%@ 0741-3106
%C New York, NY
%I IEEE
%M PreJuSER-16035
%P 1116 - 1118
%D 2011
%Z Manuscript received April 21, 2011; revised May 6, 2011; accepted May 8, 2011. Date of publication June 23, 2011; date of current version July 27, 2011. This work was supported by Intel Corporation, USA. The review of this letter was arranged by Editor A. Ortiz-Conde.
%X In this letter, bipolar fast-pulse switching in TiO2-based nanocrossbar devices was investigated. A dedicated measurement setup was used to measure the transient currents during 5-ns resistive switching. Transient peak currents for the SET and RESET processes were as high as 200 and 230 mu A, respectively. The currents observed during fast-pulse switching are explained and simulated by Joule heating, which is needed for fast oxygen-vacancy movement. The measured transient currents enable a further optimization of resistive switches based on TiO2
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000293710400041
%R 10.1109/LED.2011.2156377
%U https://juser.fz-juelich.de/record/16035