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@ARTICLE{Hermes:16035,
author = {Hermes, C. and Wimmer, M. and Menzel, S. and Fleck, K. and
Gruns, G. and Salinga, M. and Böttger, U. and Bruchhaus, R.
and Schmitz-Kempen, T. and Wuttig, M. and Waser, R.},
title = {{A}nalysis of transient currents during ultrafast switching
of {T}i{O}2 nanocrossbar devices},
journal = {IEEE Electron Device Letters},
volume = {32},
issn = {0741-3106},
address = {New York, NY},
publisher = {IEEE},
reportid = {PreJuSER-16035},
pages = {1116 - 1118},
year = {2011},
note = {Manuscript received April 21, 2011; revised May 6, 2011;
accepted May 8, 2011. Date of publication June 23, 2011;
date of current version July 27, 2011. This work was
supported by Intel Corporation, USA. The review of this
letter was arranged by Editor A. Ortiz-Conde.},
abstract = {In this letter, bipolar fast-pulse switching in TiO2-based
nanocrossbar devices was investigated. A dedicated
measurement setup was used to measure the transient currents
during 5-ns resistive switching. Transient peak currents for
the SET and RESET processes were as high as 200 and 230 mu
A, respectively. The currents observed during fast-pulse
switching are explained and simulated by Joule heating,
which is needed for fast oxygen-vacancy movement. The
measured transient currents enable a further optimization of
resistive switches based on TiO2},
keywords = {J (WoSType)},
cin = {PGI-7 / JARA-FIT},
ddc = {620},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Engineering, Electrical $\&$ Electronic},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000293710400041},
doi = {10.1109/LED.2011.2156377},
url = {https://juser.fz-juelich.de/record/16035},
}