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024 7 _ |2 DOI
|a 10.1109/LED.2011.2156377
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024 7 _ |2 ISSN
|a 0741-3106
037 _ _ |a PreJuSER-16035
041 _ _ |a eng
082 _ _ |a 620
084 _ _ |2 WoS
|a Engineering, Electrical & Electronic
100 1 _ |a Hermes, C.
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245 _ _ |a Analysis of transient currents during ultrafast switching of TiO2 nanocrossbar devices
260 _ _ |c 2011
|a New York, NY
|b IEEE
300 _ _ |a 1116 - 1118
336 7 _ |a Journal Article
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440 _ 0 |a IEEE Electron Device Letters
|x 0741-3106
|0 2464
|y 8
|v 32
500 _ _ |3 POF3_Assignment on 2016-02-29
500 _ _ |a Manuscript received April 21, 2011; revised May 6, 2011; accepted May 8, 2011. Date of publication June 23, 2011; date of current version July 27, 2011. This work was supported by Intel Corporation, USA. The review of this letter was arranged by Editor A. Ortiz-Conde.
520 _ _ |a In this letter, bipolar fast-pulse switching in TiO2-based nanocrossbar devices was investigated. A dedicated measurement setup was used to measure the transient currents during 5-ns resistive switching. Transient peak currents for the SET and RESET processes were as high as 200 and 230 mu A, respectively. The currents observed during fast-pulse switching are explained and simulated by Joule heating, which is needed for fast oxygen-vacancy movement. The measured transient currents enable a further optimization of resistive switches based on TiO2
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|a Fast pulses
653 2 0 |2 Author
|a nanocrossbar device
653 2 0 |2 Author
|a resistive switching
653 2 0 |2 Author
|a TiO2
653 2 0 |2 Author
|a transient current
700 1 _ |a Wimmer, M.
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700 1 _ |a Menzel, S.
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700 1 _ |a Fleck, K.
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700 1 _ |a Gruns, G.
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700 1 _ |a Salinga, M.
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700 1 _ |a Böttger, U.
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700 1 _ |a Bruchhaus, R.
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700 1 _ |a Schmitz-Kempen, T.
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700 1 _ |a Wuttig, M.
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700 1 _ |a Waser, R.
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773 _ _ |0 PERI:(DE-600)2034325-5
|a 10.1109/LED.2011.2156377
|g Vol. 32, p. 1116 - 1118
|p 1116 - 1118
|q 32<1116 - 1118
|t IEEE Electron Device Letters
|v 32
|x 0741-3106
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856 7 _ |u http://dx.doi.org/10.1109/LED.2011.2156377
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