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@ARTICLE{Raissi:16157,
      author       = {Raissi, M. and Regula, G. and Hadj Belgacem, C. and Rochdi,
                      N. and Bozzo-Escoubas, S. and Coudreau, C. and Holländer,
                      B. and Fnaiech, M. and D'Avitaya, F.A. and Lazzari, J.-L.},
      title        = {{D}ifferent architectures of relaxed {S}i1-x{G}e/{S}i
                      preudo-substrates grown by low-pressure chemical vapor
                      deposition: {S}tructural and morphological characteristics},
      journal      = {Journal of crystal growth},
      volume       = {328},
      issn         = {0022-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-16157},
      pages        = {18-24},
      year         = {2011},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {A detailed characterization of SiGe thin layers grown by
                      low-pressure chemical vapor deposition (LP-CVD) on different
                      types of Si buffer layers (BLs) is presented. Using the same
                      conditions of SiGe growth, Si BLs were elaborated in
                      ultra-high vacuum conditions at low (575 degrees C) and
                      medium (700 degrees C) temperatures to improve the
                      crystalline quality of the Si buffer layer. Using both types
                      of Si BLs, the SiGe layer exhibits a very high density of
                      dislocations (> 10(5) cm(-2)). Here, we proposed to create a
                      ductile area in the Si BL, before the SiGe deposition. It
                      consists of nanocavities located at about 100 nm under the
                      Si BL surface and obtained by He+ implantation at 10 key and
                      at room temperature with fluencies of 5 x 10(15) ions cm(-2)
                      or 5 x 10(16) ions cm(-2). The creation of the nanocavity
                      layer is enabled by an annealing step at 700 degrees C for
                      one hour. These kinds of Si BLs were studied by cross
                      section transmission electron microscopy, X-ray diffraction,
                      Rutherford backscattering, photoluminescence, atomic force
                      and optical microscopy before and after revealing the
                      dislocations by the chemical etching of SiGe layers. From
                      these analyses, we evidenced the blocking of threading
                      dislocations by the formation of loops located between the
                      region of nanocavities formed in the substrate and the
                      SiGe/Si interface. This method allows to strongly enhance
                      the relaxation rate $(97\%)$ of SiGe layers, and to improve
                      their crystalline and morphological quality for their use
                      for high-speed microelectronic and optoelectronic devices
                      for which the surface roughness and the threading
                      dislocation density are key issues. (C) 2011 Elsevier B.V.
                      All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Crystallography / Materials Science, Multidisciplinary /
                      Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000293725900004},
      doi          = {10.1016/j.jcrysgro.2011.06.035},
      url          = {https://juser.fz-juelich.de/record/16157},
}