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@ARTICLE{Deiter:16366,
      author       = {Deiter, C. and Bierkandt, M. and Klust, A. and Kumpf, C.
                      and Su, Y. and Bunk, O. and Feidenhans'l, R. and
                      Wollschläger, J.},
      title        = {{S}tructural transitions and relaxation processes during
                      the epitaxial growth of ultrathin {C}a{F}2 films on
                      {S}i(111)},
      journal      = {Physical review / B},
      volume       = {82},
      number       = {8},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {PreJuSER-16366},
      pages        = {085449},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The structure and morphology of ultrathin lattice matched
                      CaF2 films of very few monolayers thickness, which were
                      deposited on Si(111) substrates by molecular-beam epitaxy,
                      have been studied in situ by synchrotron based grazing
                      incidence x-ray diffraction. Even for the thinnest
                      investigated film of three monolayers thickness, the
                      in-plane structure of the CaF2 film is determined by a
                      lateral separation in two domains: a pseudomorphic phase
                      assuming the lateral lattice constant of the Si(111)
                      substrate and a completely relaxed phase. Analysis of the
                      crystal truncation rods verifies that both phases adopt the
                      entire homogeneous CaF2 film thickness. Therefore, we
                      propose that atomic steps of the substrate bypass the
                      nucleation barrier for the formation of (Shockley partial)
                      dislocations so that the film starts to relax below the
                      classical critical film thickness. While the relaxed phase
                      assumes also the CaF2 bulk lattice constant for the vertical
                      direction, the vertical lattice constant of the
                      pseudomorphic phase increases due to the compressive lateral
                      strain at the interface. This vertical expansion of the
                      pseudomorphic phase, however, is larger than expected from
                      the elastic constants of the CaF2 bulk. The fraction of the
                      pseudomorphic CaF2 phase decreases with increasing film
                      thickness. The interface between the pseudomorphic CaF2
                      phase and the Si(111) substrate is characterized by Ca on
                      T-4 sites, a smaller distance between the Si(111) substrate
                      and the CaF interface layer and an expanded layer distance
                      between CaF interface layer and the completely
                      stoichiometric CaF2 film.},
      keywords     = {J (WoSType)},
      cin          = {PGI-3 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-3-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000281406100004},
      doi          = {10.1103/PhysRevB.82.085449},
      url          = {https://juser.fz-juelich.de/record/16366},
}