TY  - JOUR
AU  - Hermes, C.
AU  - Bruchhaus, R.
AU  - Waser, R.
TI  - Forming-free TiO2-based resistive switching devices on CMOS-compatible W-plugs
JO  - IEEE Electron Device Letters
VL  - 32
SN  - 0741-3106
CY  - New York, NY
PB  - IEEE
M1  - PreJuSER-16630
SP  - 1588 - 1590
PY  - 2011
N1  - Manuscript received July 7, 2011; revised July 29, 2011; accepted August 18, 2011. Date of publication September 28, 2011; date of current version October 26, 2011. This work was supported by Intel Corporation, USA and the Deutsche Forschungsgemeinschaft (SFB 917). The review of this letter was arranged by Editor T. San.
AB  - In this letter, bipolar resistive switching in TiO2-based memory elements deposited on CMOS-compatible W-plugs is examined. By comparison with a Pt/TiO2/W resistive switch, it is demonstrated that the use of a 5-nm-thin Ti or W interlayer between the Pt top electrode and the 25-nm TiO2 film is the key step for the release from the necessity of electroforming, which is usually required in redox-based resistive switching elements. This is explained by an intentional barrier lowering between the oxide and the electrode materials. The forming-free characteristics on W-plugs make the devices very attractive for future nonvolatile memory applications.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000296239500040
DO  - DOI:10.1109/LED.2011.2166371
UR  - https://juser.fz-juelich.de/record/16630
ER  -