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@ARTICLE{Hermes:16630,
      author       = {Hermes, C. and Bruchhaus, R. and Waser, R.},
      title        = {{F}orming-free {T}i{O}2-based resistive switching devices
                      on {CMOS}-compatible {W}-plugs},
      journal      = {IEEE Electron Device Letters},
      volume       = {32},
      issn         = {0741-3106},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {PreJuSER-16630},
      pages        = {1588 - 1590},
      year         = {2011},
      note         = {Manuscript received July 7, 2011; revised July 29, 2011;
                      accepted August 18, 2011. Date of publication September 28,
                      2011; date of current version October 26, 2011. This work
                      was supported by Intel Corporation, USA and the Deutsche
                      Forschungsgemeinschaft (SFB 917). The review of this letter
                      was arranged by Editor T. San.},
      abstract     = {In this letter, bipolar resistive switching in TiO2-based
                      memory elements deposited on CMOS-compatible W-plugs is
                      examined. By comparison with a Pt/TiO2/W resistive switch,
                      it is demonstrated that the use of a 5-nm-thin Ti or W
                      interlayer between the Pt top electrode and the 25-nm TiO2
                      film is the key step for the release from the necessity of
                      electroforming, which is usually required in redox-based
                      resistive switching elements. This is explained by an
                      intentional barrier lowering between the oxide and the
                      electrode materials. The forming-free characteristics on
                      W-plugs make the devices very attractive for future
                      nonvolatile memory applications.},
      keywords     = {J (WoSType)},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000296239500040},
      doi          = {10.1109/LED.2011.2166371},
      url          = {https://juser.fz-juelich.de/record/16630},
}