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@ARTICLE{Soni:16631,
      author       = {Soni, R. and Meuffels, P. and Staikov, G. and Weng, R. and
                      Kügeler, C. and Petraru, A. and Hambe, M. and Waser, R. and
                      Kohlstedt, H.},
      title        = {{O}n the stochastic nature of resistive switching in {C}u
                      doped {G}e0.3{S}e0.7 based memory devices},
      journal      = {Journal of applied physics},
      volume       = {110},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-16631},
      pages        = {054509},
      year         = {2011},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Currently, there is great interest in using solid
                      electrolytes to develop resistive switching based
                      nonvolatile memories (RRAM) and logic devices. Despite
                      recent progress, our understanding of the microscopic origin
                      of the switching process and its stochastic behavior is
                      still limited. In order to understand this behavior, we
                      present a statistical "breakdown" analysis performed on Cu
                      doped Ge0.3Se0.7 based memory devices under elevated
                      temperature and constant voltage stress conditions.
                      Following the approach of electrochemical phase formation,
                      the precursor of the "ON resistance switching" is considered
                      to be nucleation - the emergence of small clusters of atoms
                      carrying the basic properties of the new phase which forms
                      the conducting filament. Within the framework of nucleation
                      theory, the observed fluctuations in the time required for
                      "ON resistance switching" are found to be consistent with
                      the stochastic nature of critical nucleus formation. (C)
                      2011 American Institute of Physics. [doi:10.1063/1.3631013]},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-7},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000294968600145},
      doi          = {10.1063/1.3631013},
      url          = {https://juser.fz-juelich.de/record/16631},
}