TY  - JOUR
AU  - Mesic, B.
AU  - Schroeder, H.
TI  - Integration of perovskite oxide dielectrics into complementary metal-oxide-semiconductor capacitor structures using amorphous TaSiN as oxygen diffusion barrier
JO  - Journal of applied physics
VL  - 110
SN  - 0021-8979
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-16720
SP  - 064117
PY  - 2011
N1  - Record converted from VDB: 12.11.2012
AB  - The high permittivity perovskite oxides have been intensively investigated for their possible application as dielectric materials for stacked capacitors in dynamic random access memory circuits. For the integration of such oxide materials into the CMOS world, a conductive diffusion barrier is indispensable. An optimized stack p(++)-Si/Pt/Ta21Si57N21/Ir was developed and used as the bottom electrode for the oxide dielectric. The amorphous TaSiN film as oxygen diffusion barrier showed excellent conductive properties and a good thermal stability up to 700 degrees C in oxygen ambient. The additional protective iridium layer improved the surface roughness after annealing. A 100-nm-thick (Ba,Sr) TiO3 film was deposited using pulsed laser deposition at 550 degrees C, showing very promising properties for application; the maximum relative dielectric constant at zero field is k approximate to 470, and the leakage current density is below 10(-6) A/cm(2) for fields lower then +/- 200 kV/cm, corresponding to an applied voltage of +/- 2 V. (C) 2011 American Institute of Physics. [doi:10.1063/1.3641636]
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000295619300120
DO  - DOI:10.1063/1.3641636
UR  - https://juser.fz-juelich.de/record/16720
ER  -