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@ARTICLE{Mesic:16720,
      author       = {Mesic, B. and Schroeder, H.},
      title        = {{I}ntegration of perovskite oxide dielectrics into
                      complementary metal-oxide-semiconductor capacitor structures
                      using amorphous {T}a{S}i{N} as oxygen diffusion barrier},
      journal      = {Journal of applied physics},
      volume       = {110},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-16720},
      pages        = {064117},
      year         = {2011},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The high permittivity perovskite oxides have been
                      intensively investigated for their possible application as
                      dielectric materials for stacked capacitors in dynamic
                      random access memory circuits. For the integration of such
                      oxide materials into the CMOS world, a conductive diffusion
                      barrier is indispensable. An optimized stack
                      p(++)-Si/Pt/Ta21Si57N21/Ir was developed and used as the
                      bottom electrode for the oxide dielectric. The amorphous
                      TaSiN film as oxygen diffusion barrier showed excellent
                      conductive properties and a good thermal stability up to 700
                      degrees C in oxygen ambient. The additional protective
                      iridium layer improved the surface roughness after
                      annealing. A 100-nm-thick (Ba,Sr) TiO3 film was deposited
                      using pulsed laser deposition at 550 degrees C, showing very
                      promising properties for application; the maximum relative
                      dielectric constant at zero field is k approximate to 470,
                      and the leakage current density is below 10(-6) A/cm(2) for
                      fields lower then +/- 200 kV/cm, corresponding to an applied
                      voltage of +/- 2 V. (C) 2011 American Institute of Physics.
                      [doi:10.1063/1.3641636]},
      keywords     = {J (WoSType)},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000295619300120},
      doi          = {10.1063/1.3641636},
      url          = {https://juser.fz-juelich.de/record/16720},
}