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| Hauptseite > Publikationsdatenbank > Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices > print |
| Hauptseite > Publikationsdatenbank > Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices > print |
| 001 | 171755 | ||
| 005 | 20210129214310.0 | ||
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| 100 | 1 | _ | |a Herpers, Anja |0 P:(DE-Juel1)140552 |b 0 |e Corresponding Author |u fzj |
| 245 | _ | _ | |a Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices |
| 260 | _ | _ | |a Weinheim |c 2014 |b Wiley-VCH |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1413955508_8747 |2 PUB:(DE-HGF) |
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| 520 | _ | _ | |a By using hard X-ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr0.48Ca0.52MnO3 (PCMO) devices is based on a redox-process that mainly occurs on the Ti-side. The different resistance states are determined by the amount of fully oxidized Ti-ions in the stack, implying a reversible redox-reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier. |
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| 773 | _ | _ | |a 10.1002/adma.201304054 |g Vol. 26, no. 17, p. 2730 - 2735 |0 PERI:(DE-600)1474949-x |n 17 |p 2730 - 2735 |t Advanced materials |v 26 |y 2014 |x 0935-9648 |
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