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@ARTICLE{Claudio:171763,
      author       = {Claudio, Tania and Stein, Niklas and Stroppa, Daniel G. and
                      Klobes, Benedikt and Koza, Michael Marek and Kudejova, Petra
                      and Petermann, Nils and Wiggers, Hartmut and Schierning,
                      Gabi and Hermann, Raphael},
      title        = {{N}anocrystalline silicon: lattice dynamics and enhanced
                      thermoelectric properties},
      journal      = {Physical chemistry, chemical physics},
      volume       = {16},
      number       = {47},
      issn         = {1463-9084},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {FZJ-2014-05328},
      pages        = {25701 - 25709},
      year         = {2014},
      abstract     = {Silicon has several advantages when compared to other
                      thermoelectric materials, but until recently it was not used
                      for thermoelectric applications due to its high thermal
                      conductivity, 156 W K−1 m−1 at room temperature.
                      Nanostructuration as means to decrease thermal transport
                      through enhanced phonon scattering has been a subject of
                      many studies. In this work we have evaluated the effects of
                      nanostructuration on the lattice dynamics of bulk
                      nanocrystalline doped silicon. The samples were prepared by
                      gas phase synthesis, followed by current and pressure
                      assisted sintering. The heat capacity, density of phonons
                      states, and elastic constants were measured, which all
                      reveal a significant, $≈25\%,$ reduction in the speed of
                      sound. The samples present a significantly decreased lattice
                      thermal conductivity, ≈25 W K−1 m−1, which, combined
                      with a very high carrier mobility, results in a
                      dimensionless figure of merit with a competitive value that
                      peaks at ZT ≈ 0.57 at 973 °C. Due to its easily scalable
                      and extremely low-cost production process, nanocrystalline
                      Si prepared by gas phase synthesis followed by sintering
                      could become the material of choice for high temperature
                      thermoelectric generators.},
      cin          = {JCNS-2 / PGI-4 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)JCNS-2-20110106 / I:(DE-Juel1)PGI-4-20110106 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {422 - Spin-based and quantum information (POF2-422) / 424 -
                      Exploratory materials and phenomena (POF2-424) / 542 -
                      Neutrons (POF2-542) / 544 - In-house Research with PNI
                      (POF2-544) / 54G - JCNS (POF2-54G24)},
      pid          = {G:(DE-HGF)POF2-422 / G:(DE-HGF)POF2-424 /
                      G:(DE-HGF)POF2-542 / G:(DE-HGF)POF2-544 /
                      G:(DE-HGF)POF2-54G24},
      experiment   = {EXP:(DE-MLZ)KWS1-20140101 / EXP:(DE-MLZ)PGAA-20140101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000345208200005},
      pubmed       = {pmid:24848359},
      doi          = {10.1039/c3cp53749h},
      url          = {https://juser.fz-juelich.de/record/171763},
}