000172043 001__ 172043
000172043 005__ 20210129214349.0
000172043 020__ $$a978-1-4799-5474-2
000172043 037__ $$aFZJ-2014-05592
000172043 041__ $$aEnglish
000172043 1001_ $$0P:(DE-Juel1)125583$$aFox, Alfred$$b0
000172043 1112_ $$aASDAM 2014$$cSmolenice$$d2014-10-20 - 2014-10-22$$gASDAM 2014$$wSlovakia
000172043 245__ $$aNovel Douple-Level-T-Gate Technology
000172043 260__ $$aDanver, MA 01923$$bIEEE$$c2014
000172043 29510 $$aThe 10the International Conference on Advanced Semiconductor Devices and Microsystems
000172043 300__ $$a89-92
000172043 3367_ $$0PUB:(DE-HGF)8$$2PUB:(DE-HGF)$$aContribution to a conference proceedings$$bcontrib$$mcontrib$$s1415168018_23054
000172043 3367_ $$0PUB:(DE-HGF)7$$2PUB:(DE-HGF)$$aContribution to a book$$mcontb
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000172043 3367_ $$2BibTeX$$aINPROCEEDINGS
000172043 520__ $$aWe developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer. With the help of this technological process we prepared T-gate feet with widths as small as 200 nm. The major advantage of our process is its use of only standard optical lithography. It allows the fabrication of 100 nanometer size T-gates for transistors. High electron mobility transistors (HEMTs) were fabricated on an AlGaN/GaN/sapphire material structure with an original gate length Lg of 2 µm. Their cutoff frequency of 6 GHz was improved to 60 GHz by etching the gate to a 200 nm length double T-gate contact.
000172043 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000172043 65027 $$0V:(DE-MLZ)SciArea-220$$2V:(DE-HGF)$$aInstrument and Method Development$$x0
000172043 65017 $$0V:(DE-MLZ)GC-120$$2V:(DE-HGF)$$aInformation Technology and Functional Materials$$x0
000172043 65017 $$0V:(DE-MLZ)GC-150$$2V:(DE-HGF)$$aNano Science and Technology$$x1
000172043 693__ $$0EXP:(DE-MLZ)DEL-20140101$$5EXP:(DE-MLZ)DEL-20140101$$eDetectors/Electronics$$x0
000172043 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b1
000172043 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b2
000172043 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, Stefan$$b3$$eCorresponding Author
000172043 7001_ $$0P:(DE-HGF)0$$aArango, Y. C.$$b4
000172043 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b5
000172043 7001_ $$0P:(DE-HGF)0$$aSofer, Z.$$b6
000172043 7001_ $$0P:(DE-HGF)0$$aGreusova, D.$$b7
000172043 7001_ $$0P:(DE-HGF)0$$aNovak, J.$$b8
000172043 7001_ $$0P:(DE-HGF)0$$aKordos, P.$$b9
000172043 7001_ $$0P:(DE-HGF)0$$aMarso, M.$$b10
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000172043 9141_ $$y2014
000172043 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125583$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
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000172043 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000172043 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000172043 9132_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bPOF III$$lKey Technologies$$vFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$x0
000172043 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000172043 920__ $$lyes
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