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@INPROCEEDINGS{Fox:172043,
      author       = {Fox, Alfred and Mikulics, Martin and Hardtdegen, Hilde and
                      Trellenkamp, Stefan and Arango, Y. C. and Grützmacher,
                      Detlev and Sofer, Z. and Greusova, D. and Novak, J. and
                      Kordos, P. and Marso, M.},
      title        = {{N}ovel {D}ouple-{L}evel-{T}-{G}ate {T}echnology},
      address      = {Danver, MA 01923},
      publisher    = {IEEE},
      reportid     = {FZJ-2014-05592},
      isbn         = {978-1-4799-5474-2},
      pages        = {89-92},
      year         = {2014},
      comment      = {The 10the International Conference on Advanced
                      Semiconductor Devices and Microsystems},
      booktitle     = {The 10the International Conference on
                       Advanced Semiconductor Devices and
                       Microsystems},
      abstract     = {We developed a novel double-level-T-gate technology based
                      on wet etching of a metal gate interlayer. With the help of
                      this technological process we prepared T-gate feet with
                      widths as small as 200 nm. The major advantage of our
                      process is its use of only standard optical lithography. It
                      allows the fabrication of 100 nanometer size T-gates for
                      transistors. High electron mobility transistors (HEMTs) were
                      fabricated on an AlGaN/GaN/sapphire material structure with
                      an original gate length Lg of 2 µm. Their cutoff frequency
                      of 6 GHz was improved to 60 GHz by etching the gate to a 200
                      nm length double T-gate contact.},
      month         = {Oct},
      date          = {2014-10-20},
      organization  = {ASDAM 2014, Smolenice (Slovakia), 20
                       Oct 2014 - 22 Oct 2014},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      experiment   = {EXP:(DE-MLZ)DEL-20140101},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      url          = {https://juser.fz-juelich.de/record/172043},
}