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000172044 037__ $$aFZJ-2014-05593
000172044 041__ $$aEnglish
000172044 1001_ $$0P:(DE-Juel1)125583$$aFox, Alfred$$b0$$eCorresponding Author
000172044 1112_ $$aASDAM 2014$$cSmolenice$$d2014-10-20 - 2014-10-22$$wSlovakia
000172044 245__ $$aNovel Douple-Level-T-Gate tecnology
000172044 260__ $$c2014
000172044 3367_ $$033$$2EndNote$$aConference Paper
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000172044 520__ $$aWe developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer. With the help of this technological process we prepared T-gate feet with widths as small as 200 nm. The major advantage of our process is its use of only standard optical lithography. It allows the fabrication of 100 nanometer size T-gates for transistors. High electron mobility transistors (HEMTs) were fabricated on an AlGaN/GaN/sapphire material structure with an original gate length Lg of 2 µm. Their cutoff frequency of 6 GHz was improved to 60 GHz by etching the gate to a 200 nm length double T-gate contact.
000172044 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000172044 65027 $$0V:(DE-MLZ)SciArea-180$$2V:(DE-HGF)$$aMaterials Science$$x0
000172044 65017 $$0V:(DE-MLZ)GC-120$$2V:(DE-HGF)$$aInformation Technology and Functional Materials$$x0
000172044 693__ $$0EXP:(DE-MLZ)DEL-20140101$$5EXP:(DE-MLZ)DEL-20140101$$eDetectors/Electronics$$x0
000172044 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b1
000172044 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b2
000172044 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, Stefan$$b3
000172044 7001_ $$0P:(DE-HGF)0$$aArango, Y:C:$$b4
000172044 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b5
000172044 7001_ $$0P:(DE-HGF)0$$aGregusova, D.$$b6
000172044 7001_ $$0P:(DE-HGF)0$$aSofer, Z.$$b7
000172044 7001_ $$0P:(DE-HGF)0$$aNovak, J.$$b8
000172044 7001_ $$0P:(DE-HGF)0$$aKordos, P.$$b9
000172044 7001_ $$0P:(DE-HGF)0$$aMarso, M.$$b10
000172044 773__ $$y2014
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000172044 9132_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bPOF III$$lKey Technologies$$vFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$x0
000172044 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000172044 9141_ $$y2014
000172044 920__ $$lyes
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