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001     172044
005     20210129214349.0
037 _ _ |a FZJ-2014-05593
041 _ _ |a English
100 1 _ |a Fox, Alfred
|0 P:(DE-Juel1)125583
|b 0
|e Corresponding Author
111 2 _ |a ASDAM 2014
|c Smolenice
|d 2014-10-20 - 2014-10-22
|w Slovakia
245 _ _ |a Novel Douple-Level-T-Gate tecnology
260 _ _ |c 2014
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a INPROCEEDINGS
|2 BibTeX
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a CONFERENCE_POSTER
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336 7 _ |a Output Types/Conference Poster
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336 7 _ |a Poster
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|s 1479370914_19625
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502 _ _ |c FZJ
520 _ _ |a We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer. With the help of this technological process we prepared T-gate feet with widths as small as 200 nm. The major advantage of our process is its use of only standard optical lithography. It allows the fabrication of 100 nanometer size T-gates for transistors. High electron mobility transistors (HEMTs) were fabricated on an AlGaN/GaN/sapphire material structure with an original gate length Lg of 2 µm. Their cutoff frequency of 6 GHz was improved to 60 GHz by etching the gate to a 200 nm length double T-gate contact.
536 _ _ |a 421 - Frontiers of charge based Electronics (POF2-421)
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|c POF2-421
|f POF II
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650 2 7 |a Materials Science
|0 V:(DE-MLZ)SciArea-180
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650 1 7 |a Information Technology and Functional Materials
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693 _ _ |0 EXP:(DE-MLZ)DEL-20140101
|5 EXP:(DE-MLZ)DEL-20140101
|e Detectors/Electronics
|x 0
700 1 _ |a Mikulics, Martin
|0 P:(DE-Juel1)128613
|b 1
700 1 _ |a Hardtdegen, Hilde
|0 P:(DE-Juel1)125593
|b 2
700 1 _ |a Trellenkamp, Stefan
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|b 3
700 1 _ |a Arango, Y:C:
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|b 4
700 1 _ |a Grützmacher, Detlev
|0 P:(DE-Juel1)125588
|b 5
700 1 _ |a Gregusova, D.
|0 P:(DE-HGF)0
|b 6
700 1 _ |a Sofer, Z.
|0 P:(DE-HGF)0
|b 7
700 1 _ |a Novak, J.
|0 P:(DE-HGF)0
|b 8
700 1 _ |a Kordos, P.
|0 P:(DE-HGF)0
|b 9
700 1 _ |a Marso, M.
|0 P:(DE-HGF)0
|b 10
773 _ _ |y 2014
856 4 _ |u https://juser.fz-juelich.de/record/172044/files/FZJ-2014-05593.doc
|y Restricted
909 C O |o oai:juser.fz-juelich.de:172044
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910 1 _ |a Forschungszentrum Jülich GmbH
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910 1 _ |a PGI-8-PT
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910 1 _ |a Forschungszentrum Jülich GmbH
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910 1 _ |a Forschungszentrum Jülich GmbH
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913 2 _ |a DE-HGF
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|l Key Technologies
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|v Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
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914 1 _ |y 2014
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
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|l Halbleiter-Nanoelektronik
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980 _ _ |a poster
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a UNRESTRICTED

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