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@INPROCEEDINGS{Marso:172046,
      author       = {Marso, M. and Mikulics, Martin and Winden, W. and Arango,
                      Y. C. and Schäfer, Anna and Sofer, Z. and Grützmacher,
                      Detlev and Hardtdegen, Hilde},
      title        = {{I}n{G}a{N} nano-{LED}s for energy saving optoelectronics},
      address      = {Danver, MA 01923},
      publisher    = {IEEE},
      reportid     = {FZJ-2014-05595},
      isbn         = {978-1-4799-54759},
      pages        = {315-318},
      year         = {2014},
      abstract     = {Vertically integrated III-nitride nano-LEDs designed for
                      operation in thetelecommunication-wavelength range were
                      fabricated and tested in the (p-GaN/InGaN/n-GaN/sapphire)
                      material system. We found that the band edgeluminescence
                      energy of the nano-LEDs could be engineered by their size
                      andby the strain interaction with the masked SiO2/GaN
                      substrates; it dependslinearly on the structure size. The
                      results of reliability measurements provethat our
                      technological process is perfectly suited for long-term
                      operation ofthe LEDs without any indication of degradation
                      effects. The presentedtechnology shows strong potential for
                      future low energy consumptionoptoelectronics.1.
                      IntroductionSingle photon emitters based on InGaN nano-LEDs
                      (light emitting diodes) operating atroom temperature are the
                      key to enable future low energy consumption, highly secure
                      andultrafast optoelectronics [1]. There is an especially
                      strong need to develop such emittingsources at the
                      wavelengths used for telecommunication, which are fully
                      compatible withestablished communication systems. Major
                      challenges are the whole nano-LED integrationtechnology and
                      especially the contacts. The top contact should be highly
                      electricallyconductive, highly optically transparent,
                      thermally and mechanically stable and simple tofabricate.2.
                      Device fabricationFirst, we started with the site-controlled
                      growth of InGaN nanostructures via
                      catalystfreeselective-area MOVPE [2]. The manufacturing
                      process was optimized with respect to themask pattern in
                      order to be able to fabricate individually addressable InGaN
                      nanopyramidbased nano-LEDs. The starting point for growth
                      were uniform and smooth n-GaN layers of atleast 1.3μm on
                      sapphire (c-plane) masked with SiO2. Afterwards a
                      hexagonally arranged arrayof openings was defined by
                      electron beam lithography followed by reactive ion etching
                      (RIE)with trifluoromethane (CHF3) gas. The separation
                      distance was fixed to 3μm and the bottomhole diameter was
                      varied from 20 nm to 100 nm. All samples were grown by MOVPE
                      in anAIX 200/4 RF-S horizontal flow reactor (AIXTRON). The
                      growth parameters were tunedwith respect to the highest
                      possible selectivity. After this optimization, the growth
                      time was978-1-},
      month         = {Oct},
      date          = {2014-10-20},
      organization  = {ASDAM 2014, Smolenice (Slovakia), 20
                       Oct 2014 - 22 Oct 2014},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      experiment   = {EXP:(DE-MLZ)DEL-20140101},
      typ          = {PUB:(DE-HGF)8},
      url          = {https://juser.fz-juelich.de/record/172046},
}