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@ARTICLE{Peyser:172211,
author = {Peyser, Alexander and Gillespie, Dirk and Roth, Roland and
Nonner, Wolfgang},
title = {{D}omain and {I}nterdomain {E}nergetics {U}nderlying
{G}ating in {S}haker-{T}ype {K}v {C}hannels},
journal = {Biophysical journal},
volume = {107},
number = {8},
issn = {0006-3495},
address = {New York, NY},
publisher = {Rockefeller Univ. Press},
reportid = {FZJ-2014-05700},
pages = {1841 - 1852},
year = {2014},
abstract = {To understand gating events with a time-base many orders of
magnitude slower than that of atomic motion in voltage-gated
ion channels such as the Shaker-type K V channels, a
multiscale physical model is constructed from the
experimentally well-characterized voltage sensor (VS)
domains coupled to a hydrophobic gate. The four VS domains
are described by a continuum electrostatic model under
voltage-clamp conditions, the control of ion flow by the
gate domain is described by a vapor-lock mechanism, and the
simple coupling principle is informed by known experimental
results and trial-and-error. The configurational energy
computed for each element is used to produce a total
Hamiltonian that is a function of applied voltage, VS
positions and gate radius. We compute statistical-mechanical
expectation values of macroscopic laboratory observables.
This approach stands in contrast with molecular dynamic
models which are challenged by increasing scale, and kinetic
models which assume a probability distribution rather than
derive it from the underlying physics. This generic model
predicts well the Shaker charge/voltage and
conductance/voltage relations; the tight constraints
underlying these result allow us to quantitatively assess
the underlying physical mechanisms. The total electrical
work picked up by the VS domains is an order of magnitude
larger than the work required to actuate the gate itself,
suggesting an energetic basis for the evolutionary
flexibility of the voltage-gating mechanism. The cooperative
slide-and-interlock behavior of the VS domains described by
the VS-gate coupling relation leads to the experimentally
observed bistable gating. This engineering approach should
prove useful in the investigation of various elements
underlying gating characteristics and degraded behavior due
to mutation.},
cin = {JSC / JARA-HPC},
ddc = {570},
cid = {I:(DE-Juel1)JSC-20090406 / $I:(DE-82)080012_20140620$},
pnm = {411 - Computational Science and Mathematical Methods
(POF2-411) / SMHB - Supercomputing and Modelling for the
Human Brain (HGF-SMHB-2013-2017) / SLNS - SimLab
Neuroscience (Helmholtz-SLNS)},
pid = {G:(DE-HGF)POF2-411 / G:(DE-Juel1)HGF-SMHB-2013-2017 /
G:(DE-Juel1)Helmholtz-SLNS},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000343682700010},
pubmed = {pmid:25418165},
doi = {10.1016/j.bpj.2014.08.015},
url = {https://juser.fz-juelich.de/record/172211},
}