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000172397 1001_ $$0P:(DE-HGF)0$$aSolís, Cecilia$$b0
000172397 245__ $$aParticular Transport Properties of NiFe 2 O 4 Thin Films at High Temperatures
000172397 260__ $$aWashington, DC$$bSoc.$$c2014
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000172397 520__ $$aNiFe2O4 (NFO) thin films were deposited on quartz substrates by rf magnetron sputtering, and the influence of the deposition conditions on their physic-chemical properties was studied. The films structure and the high temperature transport properties were analyzed as a function of the deposition temperature. The analysis of the total conductivity up to 800 °C in different pO2 containing atmospheres showed a distinct electronic behavior of the films with regard to the bulk NFO material. Indeed, the thin films exhibit p-type electronic conductivity, while the bulk material is known to be a prevailing n-type electronic conductor. This difference is ascribed to the dissimilar concentration of Ni3+ in the thin films, as revealed by XPS analysis at room temperature. The bulk material with a low concentration of Ni3+ (Ni3+/Ni2+ ratio of 0.20) shows the expected n-type electronic conduction via electron hopping between Fe3+–Fe2+. On the other hand, the NFO thin films annealed at 800 °C exhibit a Ni3+/Ni2+ ratio of 0.42 and show p-type conduction via hole hopping between Ni3+–Ni2+.
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000172397 7001_ $$0P:(DE-HGF)0$$aSomacescu, Simona$$b1
000172397 7001_ $$0P:(DE-HGF)0$$aPalafox, Elena$$b2
000172397 7001_ $$0P:(DE-Juel1)161336$$aBalaguer, María$$b3$$ufzj
000172397 7001_ $$0P:(DE-HGF)0$$aSerra, José M.$$b4$$eCorresponding Author
000172397 773__ $$0PERI:(DE-600)2256522-X$$a10.1021/jp506938k$$gVol. 118, no. 42, p. 24266 - 24273$$n42$$p24266 - 24273$$tThe @journal of physical chemistry <Washington, DC> / C$$v118$$x1932-7447$$y2014
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