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@ARTICLE{Sols:172397,
      author       = {Solís, Cecilia and Somacescu, Simona and Palafox, Elena
                      and Balaguer, María and Serra, José M.},
      title        = {{P}articular {T}ransport {P}roperties of {N}i{F}e 2 {O} 4
                      {T}hin {F}ilms at {H}igh {T}emperatures},
      journal      = {The journal of physical chemistry / C},
      volume       = {118},
      number       = {42},
      issn         = {1932-7447},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2014-05877},
      pages        = {24266 - 24273},
      year         = {2014},
      abstract     = {NiFe2O4 (NFO) thin films were deposited on quartz
                      substrates by rf magnetron sputtering, and the influence of
                      the deposition conditions on their physic-chemical
                      properties was studied. The films structure and the high
                      temperature transport properties were analyzed as a function
                      of the deposition temperature. The analysis of the total
                      conductivity up to 800 °C in different pO2 containing
                      atmospheres showed a distinct electronic behavior of the
                      films with regard to the bulk NFO material. Indeed, the thin
                      films exhibit p-type electronic conductivity, while the bulk
                      material is known to be a prevailing n-type electronic
                      conductor. This difference is ascribed to the dissimilar
                      concentration of Ni3+ in the thin films, as revealed by XPS
                      analysis at room temperature. The bulk material with a low
                      concentration of Ni3+ (Ni3+/Ni2+ ratio of 0.20) shows the
                      expected n-type electronic conduction via electron hopping
                      between Fe3+–Fe2+. On the other hand, the NFO thin films
                      annealed at 800 °C exhibit a Ni3+/Ni2+ ratio of 0.42 and
                      show p-type conduction via hole hopping between
                      Ni3+–Ni2+.},
      cin          = {IEK-1},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IEK-1-20101013},
      pnm          = {122 - Power Plants (POF2-122)},
      pid          = {G:(DE-HGF)POF2-122},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000343740300008},
      doi          = {10.1021/jp506938k},
      url          = {https://juser.fz-juelich.de/record/172397},
}