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| Hauptseite > Publikationsdatenbank > Particular Transport Properties of NiFe 2 O 4 Thin Films at High Temperatures > print |
| Hauptseite > Publikationsdatenbank > Particular Transport Properties of NiFe 2 O 4 Thin Films at High Temperatures > print |
| 001 | 172397 | ||
| 005 | 20240711085603.0 | ||
| 024 | 7 | _ | |a 10.1021/jp506938k |2 doi |
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| 024 | 7 | _ | |a 1932-7455 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2014-05877 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Solís, Cecilia |0 P:(DE-HGF)0 |b 0 |
| 245 | _ | _ | |a Particular Transport Properties of NiFe 2 O 4 Thin Films at High Temperatures |
| 260 | _ | _ | |a Washington, DC |c 2014 |b Soc. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1415867922_22423 |2 PUB:(DE-HGF) |
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| 520 | _ | _ | |a NiFe2O4 (NFO) thin films were deposited on quartz substrates by rf magnetron sputtering, and the influence of the deposition conditions on their physic-chemical properties was studied. The films structure and the high temperature transport properties were analyzed as a function of the deposition temperature. The analysis of the total conductivity up to 800 °C in different pO2 containing atmospheres showed a distinct electronic behavior of the films with regard to the bulk NFO material. Indeed, the thin films exhibit p-type electronic conductivity, while the bulk material is known to be a prevailing n-type electronic conductor. This difference is ascribed to the dissimilar concentration of Ni3+ in the thin films, as revealed by XPS analysis at room temperature. The bulk material with a low concentration of Ni3+ (Ni3+/Ni2+ ratio of 0.20) shows the expected n-type electronic conduction via electron hopping between Fe3+–Fe2+. On the other hand, the NFO thin films annealed at 800 °C exhibit a Ni3+/Ni2+ ratio of 0.42 and show p-type conduction via hole hopping between Ni3+–Ni2+. |
| 536 | _ | _ | |a 122 - Power Plants (POF2-122) |0 G:(DE-HGF)POF2-122 |c POF2-122 |f POF II |x 0 |
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| 700 | 1 | _ | |a Somacescu, Simona |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Palafox, Elena |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Balaguer, María |0 P:(DE-Juel1)161336 |b 3 |u fzj |
| 700 | 1 | _ | |a Serra, José M. |0 P:(DE-HGF)0 |b 4 |e Corresponding Author |
| 773 | _ | _ | |a 10.1021/jp506938k |g Vol. 118, no. 42, p. 24266 - 24273 |0 PERI:(DE-600)2256522-X |n 42 |p 24266 - 24273 |t The @journal of physical chemistry |v 118 |y 2014 |x 1932-7447 |
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