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Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source

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2011

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC). - 2011 . - S. 251 - 253


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011
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The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-9
Document types > Books > Books
Workflow collections > Public records
Publications database
 Record created 2012-11-13, last modified 2018-02-08
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