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| Hauptseite > Publikationsdatenbank > Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source > print |
| Hauptseite > Publikationsdatenbank > Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source > print |
| 001 | 17265 | ||
| 005 | 20180208212207.0 | ||
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| 100 | 1 | _ | |a Zhao, Q.T. |b 0 |u FZJ |0 P:(DE-Juel1)VDB97138 |
| 111 | 2 | _ | |c Helsinki |d 2011-09-12 |
| 245 | _ | _ | |a Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source |
| 260 | _ | _ | |c 2011 |
| 295 | 1 | 0 | |a The European Solid-State Device Research Conference (ESSDERC) |
| 336 | 7 | _ | |a Conference Presentation |0 PUB:(DE-HGF)6 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 500 | _ | _ | |3 Presentation on a conference |
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| 700 | 1 | _ | |a Yu, W.J. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Zhang, B. |b 2 |u FZJ |0 P:(DE-Juel1)VDB83419 |
| 700 | 1 | _ | |a Schmidt, M. |b 3 |u FZJ |0 P:(DE-Juel1)VDB8227 |
| 700 | 1 | _ | |a Richter, S. |b 4 |u FZJ |0 P:(DE-Juel1)VDB64182 |
| 700 | 1 | _ | |a Buca, D. |b 5 |u FZJ |0 P:(DE-Juel1)125569 |
| 700 | 1 | _ | |a Hartmann, J.M. |b 6 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Luptak, R. |b 7 |u FZJ |0 P:(DE-Juel1)VDB76324 |
| 700 | 1 | _ | |a Fox, A. |b 8 |u FZJ |0 P:(DE-Juel1)VDB61237 |
| 700 | 1 | _ | |a Bourdelle, K.K. |b 9 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Mantl, S. |b 10 |u FZJ |0 P:(DE-Juel1)VDB4959 |
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| 914 | 1 | _ | |y 2011 |
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