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@ARTICLE{Kaiser:17267,
      author       = {Kaiser, A. M. and Gray, X. and Conti, G. and Son, J. and
                      Greer, A. and Perona, A. and Rattanachata, A. and Saw, A. J.
                      and Bostwick, A. and Yang, S. and Yang, S.-H. and Gullikson,
                      E. M. and Kortright, J. and Stemmer, B.S. and Fadley, C. S.},
      title        = {{S}uppression of {N}ear-{F}ermi {L}evel {E}lectronic
                      {S}tates at the {I}nterface in a {L}a{N}i{O}3/{S}r{T}i{O}3
                      {S}uperlattice},
      journal      = {Physical review letters},
      volume       = {107},
      issn         = {0031-9007},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {PreJuSER-17267},
      pages        = {116402},
      year         = {2011},
      note         = {We are grateful to Leon Balents for helpful discussion and
                      comments. This work was supported by a MURI program of the
                      Army Research Office (Grant No. W911-NF-09-1-0398). The
                      Advanced Light Source and J. B. K. are supported by the
                      Director, Office of Science, Office of Basic Energy
                      Sciences, Materials Sciences and Engineering Division, of
                      the U.S. Department of Energy under Contract No.
                      DE-AC02-05CH11231.},
      abstract     = {Standing-wave-excited photoemission is used to study a
                      SrTiO3/LaNiO3 superlattice. Rocking curves of core-level and
                      valence band spectra are used to derive layer-resolved
                      spectral functions, revealing a suppression of electronic
                      states near the Fermi level in the multilayer as compared to
                      bulk LaNiO3. Further analysis shows that the suppression of
                      these states is not homogeneously distributed over the
                      LaNiO3 layers but is more pronounced near the interfaces.
                      Possible origins of this effect and its relationship to a
                      previously observed metal-insulator-transition in ultrathin
                      LaNiO3 films are discussed.},
      keywords     = {J (WoSType)},
      cin          = {PGI-6},
      ddc          = {550},
      cid          = {I:(DE-Juel1)PGI-6-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Multidisciplinary},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000294783900006},
      doi          = {10.1103/PhysRevLett.107.116402},
      url          = {https://juser.fz-juelich.de/record/17267},
}