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024 7 _ |2 DOI
|a 10.1103/PhysRevLett.107.116402
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|a Physics, Multidisciplinary
100 1 _ |0 P:(DE-Juel1)VDB101972
|a Kaiser, A. M.
|b 0
|u FZJ
245 _ _ |a Suppression of Near-Fermi Level Electronic States at the Interface in a LaNiO3/SrTiO3 Superlattice
260 _ _ |a College Park, Md.
|b APS
|c 2011
300 _ _ |a 116402
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440 _ 0 |0 4925
|a Physical Review Letters
|v 107
|x 0031-9007
|y 11
500 _ _ |3 POF3_Assignment on 2016-02-29
500 _ _ |a We are grateful to Leon Balents for helpful discussion and comments. This work was supported by a MURI program of the Army Research Office (Grant No. W911-NF-09-1-0398). The Advanced Light Source and J. B. K. are supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.
520 _ _ |a Standing-wave-excited photoemission is used to study a SrTiO3/LaNiO3 superlattice. Rocking curves of core-level and valence band spectra are used to derive layer-resolved spectral functions, revealing a suppression of electronic states near the Fermi level in the multilayer as compared to bulk LaNiO3. Further analysis shows that the suppression of these states is not homogeneously distributed over the LaNiO3 layers but is more pronounced near the interfaces. Possible origins of this effect and its relationship to a previously observed metal-insulator-transition in ultrathin LaNiO3 films are discussed.
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|g Vol. 107, p. 116402
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|t Physical review letters
|v 107
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|y 2011
856 7 _ |u http://dx.doi.org/10.1103/PhysRevLett.107.116402
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