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@ARTICLE{Caspers:17478,
      author       = {Caspers, C. and Müller, M. and Gray, A. X. and Kaiser, A.
                      M. and Gloskovskii, A. and Drube, W. and Fadley, C. S. and
                      Schneider, C. M.},
      title        = {{C}hemical stability the magnetic oxide {E}u{O} directly on
                      silicon observed by hard x-ray photoemission spectroscopy},
      journal      = {Physical review / B},
      volume       = {84},
      number       = {20},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {PreJuSER-17478},
      pages        = {205217},
      year         = {2011},
      note         = {M.M. acknowledges financial support by DFG under Grant MU
                      3160/1-1. This work was supported by Federal Ministry of
                      Education and Research, Germany, under contracts 813405-8
                      WW3 and 05K10CHB. C.S.F. acknowledges salary and travel by
                      the Director, Office of Science, Office of Basic Energy
                      Sciences, Materials Sciences and Engineering Division, of
                      the US Department of Energy under contract No.
                      DE-AC02-05CH11231.},
      abstract     = {We present a detailed study of the electronic structure and
                      chemical state of high-quality stoichiometric EuO and O-rich
                      Eu1O1+x thin films grown directly on silicon without any
                      buffer layer using hard x-ray photoemission spectroscopy
                      (HAXPES). We determine the EuO oxidation state from a
                      consistent quantitative peak analysis of 4f valence band and
                      3d core-level spectra. The results prove that nearly ideal,
                      stoichiometric, and homogeneous EuO thin films can be grown
                      on silicon, with a uniform depth distribution of divalent Eu
                      cations. Furthermore, we identify the chemical stability of
                      the EuO/silicon interface from Si 2p core-level
                      photoemission. This work clearly demonstrates the successful
                      integration of high-quality EuO thin films directly on
                      silicon, opening up the pathway for the future incorporation
                      of this functional magnetic oxide into silicon-based
                      spintronic devices.},
      keywords     = {J (WoSType)},
      cin          = {PGI-6},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-6-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000297158300005},
      doi          = {10.1103/PhysRevB.84.205217},
      url          = {https://juser.fz-juelich.de/record/17478},
}