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| Hauptseite > Publikationsdatenbank > Electronic structure of EuO spin filter tunnel contacts directly on silicon > print |
| Hauptseite > Publikationsdatenbank > Electronic structure of EuO spin filter tunnel contacts directly on silicon > print |
| 001 | 17479 | ||
| 005 | 20190625111740.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1002/pssr.201105403 |
| 024 | 7 | _ | |2 WOS |a WOS:000298038600010 |
| 024 | 7 | _ | |a altmetric:1506762 |2 altmetric |
| 037 | _ | _ | |a PreJuSER-17479 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |0 P:(DE-Juel1)VDB95994 |a Caspers, C. |b 0 |u FZJ |
| 245 | _ | _ | |a Electronic structure of EuO spin filter tunnel contacts directly on silicon |
| 260 | _ | _ | |a Weinheim |b Wiley-VCH |c 2011 |
| 300 | _ | _ | |a 441 - 443 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |0 25084 |a Physica Status Solidi-Rapid Research Letters |v 5 |y 12 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a M.M. acknowledges financial support by DFG under grant MU 3160/1-1. This work was supported by BMBF under contracts 813405-8 WW3 and 05K10CHB. |
| 520 | _ | _ | |a We present an electronic structure study of a magnetic oxide/semiconductor model system, EuO on silicon, which is dedicated for efficient spin injection and spin detection in silicon-based spintronics devices.A combined electronic structure analysis of Eu core levels and valence bands using hard X-ray photoemission spectroscopy was performed to quantify the nearly ideal stoichiometry of EuO "spin filter" tunnel barriers directly on silicon, and the absence of silicon oxide at the EuO/Si interface. These results provide evidence for the successful integration of a magnetic oxide tunnel barrier with silicon, paving the way for the future integration of magnetic oxides into functional spintronics devices.[GRAPHICS]Hard X-ray photoemission spectroscopy of an Al/EuO/Si heterostructure probing the buried EuO and EuO/Si interface. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| 536 | _ | _ | |0 G:(DE-Juel1)FUEK412 |2 G:(DE-HGF) |a Grundlagen für zukünftige Informationstechnologien |c P42 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |2 WoSType |a J |
| 653 | 2 | 0 | |2 Author |a magnetic materials |
| 653 | 2 | 0 | |2 Author |a EuO |
| 653 | 2 | 0 | |2 Author |a X-ray photoemission spectra |
| 653 | 2 | 0 | |2 Author |a spin injection |
| 653 | 2 | 0 | |2 Author |a silicon |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB1106 |a Müller, M. |b 1 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB102206 |a Gray, A. X. |b 2 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB101972 |a Kaiser, A. M. |b 3 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB47217 |a Gloskovskii, A. |b 4 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB102207 |a Drube, W. |b 5 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB101984 |a Fadley, C. S. |b 6 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)130948 |a Schneider, C. M. |b 7 |u FZJ |
| 773 | _ | _ | |0 PERI:(DE-600)2259465-6 |a 10.1002/pssr.201105403 |g Vol. 5, p. 441 - 443 |p 441 - 443 |q 5<441 - 443 |t Physica status solidi / Rapid research letters |v 5 |x 1862-6270 |y 2011 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1002/pssr.201105403 |
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| 914 | 1 | _ | |y 2011 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 915 | _ | _ | |0 StatID:(DE-HGF)0020 |a No peer review |
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