% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Gray:17483,
author = {Gray, A. X. and Papp, C. and Ueda, S. and Balke, B. and
Yamashita, Y. and Plucinski, L. and Minar, J. and Braun, J.
and Ylvisaker, E. R. and Schneider, C. M. and Pickett, W. E.
and Ebert, H. and Kobayashi, K. and Fadley, C. S.},
title = {{P}robing bulk electronic structure with hard {X}-ray
angle-resolved photoemission},
journal = {Nature materials},
volume = {10},
issn = {1476-1122},
address = {Basingstoke},
publisher = {Nature Publishing Group},
reportid = {PreJuSER-17483},
pages = {759 - 764},
year = {2011},
note = {The authors would like to thank O. D. Dubon (UC Berkeley)
for providing the GaAs sample. The authors with LBNL
affiliation acknowledge support from the Director, Office of
Science, Office of Basic Energy Sciences, Materials Sciences
and Engineering Division, of the US Department of Energy
under contract number DE-AC02-05CH11231, for salary and
travel support. The measurements were performed under the
approval of NIMS Beamline Station (Proposal Nos. 2008A4906,
2008B4800, 2009A4906). This work was partially supported by
the Nanotechnology Network Project, the Ministry of
Education, Culture, Sports, Science and Technology (MEXT),
Japan. Financial support by the Deutsche
Forschungsgemeinschaft (FOR 1346, EB-154/20 and MI-1327/1)
and the Bundesministerium fur Bildung und Forschung
(05K10WMA) is also gratefully acknowledged.},
abstract = {Traditional ultraviolet/soft X-ray angle-resolved
photoemission spectroscopy (ARPES) may in some cases be too
strongly influenced by surface effects to be a useful probe
of bulk electronic structure. Going to hard X-ray photon
energies and thus larger electron inelastic mean-free paths
should provide a more accurate picture of bulk electronic
structure. We present experimental data for hard X-ray ARPES
(HARPES) at energies of 3.2 and 6.0 keV. The systems
discussed are W, as a model transition-metal system to
illustrate basic principles, and GaAs, as a
technologically-relevant material to illustrate the
potential broad applicability of this new technique. We have
investigated the effects of photon wave vector on wave
vector conservation, and assessed methods for the removal of
phonon-associated smearing of features and photoelectron
diffraction effects. The experimental results are compared
to free-electron final-state model calculations and to more
precise one-step photoemission theory including matrix
element effects.},
keywords = {J (WoSType)},
cin = {PGI-6},
ddc = {610},
cid = {I:(DE-Juel1)PGI-6-20110106},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Chemistry, Physical / Materials Science, Multidisciplinary
/ Physics, Applied / Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
pubmed = {pmid:21841798},
UT = {WOS:000295155200012},
doi = {10.1038/nmat3089},
url = {https://juser.fz-juelich.de/record/17483},
}