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@ARTICLE{Gray:17483,
      author       = {Gray, A. X. and Papp, C. and Ueda, S. and Balke, B. and
                      Yamashita, Y. and Plucinski, L. and Minar, J. and Braun, J.
                      and Ylvisaker, E. R. and Schneider, C. M. and Pickett, W. E.
                      and Ebert, H. and Kobayashi, K. and Fadley, C. S.},
      title        = {{P}robing bulk electronic structure with hard {X}-ray
                      angle-resolved photoemission},
      journal      = {Nature materials},
      volume       = {10},
      issn         = {1476-1122},
      address      = {Basingstoke},
      publisher    = {Nature Publishing Group},
      reportid     = {PreJuSER-17483},
      pages        = {759 - 764},
      year         = {2011},
      note         = {The authors would like to thank O. D. Dubon (UC Berkeley)
                      for providing the GaAs sample. The authors with LBNL
                      affiliation acknowledge support from the Director, Office of
                      Science, Office of Basic Energy Sciences, Materials Sciences
                      and Engineering Division, of the US Department of Energy
                      under contract number DE-AC02-05CH11231, for salary and
                      travel support. The measurements were performed under the
                      approval of NIMS Beamline Station (Proposal Nos. 2008A4906,
                      2008B4800, 2009A4906). This work was partially supported by
                      the Nanotechnology Network Project, the Ministry of
                      Education, Culture, Sports, Science and Technology (MEXT),
                      Japan. Financial support by the Deutsche
                      Forschungsgemeinschaft (FOR 1346, EB-154/20 and MI-1327/1)
                      and the Bundesministerium fur Bildung und Forschung
                      (05K10WMA) is also gratefully acknowledged.},
      abstract     = {Traditional ultraviolet/soft X-ray angle-resolved
                      photoemission spectroscopy (ARPES) may in some cases be too
                      strongly influenced by surface effects to be a useful probe
                      of bulk electronic structure. Going to hard X-ray photon
                      energies and thus larger electron inelastic mean-free paths
                      should provide a more accurate picture of bulk electronic
                      structure. We present experimental data for hard X-ray ARPES
                      (HARPES) at energies of 3.2 and 6.0 keV. The systems
                      discussed are W, as a model transition-metal system to
                      illustrate basic principles, and GaAs, as a
                      technologically-relevant material to illustrate the
                      potential broad applicability of this new technique. We have
                      investigated the effects of photon wave vector on wave
                      vector conservation, and assessed methods for the removal of
                      phonon-associated smearing of features and photoelectron
                      diffraction effects. The experimental results are compared
                      to free-electron final-state model calculations and to more
                      precise one-step photoemission theory including matrix
                      element effects.},
      keywords     = {J (WoSType)},
      cin          = {PGI-6},
      ddc          = {610},
      cid          = {I:(DE-Juel1)PGI-6-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Chemistry, Physical / Materials Science, Multidisciplinary
                      / Physics, Applied / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:21841798},
      UT           = {WOS:000295155200012},
      doi          = {10.1038/nmat3089},
      url          = {https://juser.fz-juelich.de/record/17483},
}