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000017484 084__ $$2WoS$$aPhysics, Applied
000017484 1001_ $$0P:(DE-Juel1)VDB83183$$aPlucinski, L.$$b0$$uFZJ
000017484 245__ $$aRobust surface electronic properties of topological insulators:   Bi2Te3 films grown by molecular beam epitaxy
000017484 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2011
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000017484 440_0 $$0562$$aApplied Physics Letters$$v98$$x0003-6951$$y22
000017484 500__ $$3POF3_Assignment on 2016-02-29
000017484 500__ $$aWe acknowledge stimulating discussions with Caitlin Morgan on the course of editing the manuscript. Thanks are due to NRW Research School "Research with Synchrotron Radiation" funded by the Northrhine-Westphalia Ministry for Innovation, Science, Research, and Technology (Grant No. 321.2-8.03.06-58782)
000017484 520__ $$aThe surface electronic properties of the important topological insulator Bi2Te3 are shown to be robust under an extended surface preparation procedure, which includes exposure to atmosphere and subsequent cleaning and recrystallization by an optimized in situ sputter-anneal procedure under ultrahigh vacuum conditions. Clear Dirac-cone features are displayed in high-resolution angle-resolved photoemission spectra from the resulting samples, indicating remarkable insensitivity of the topological surface state to cleaning-induced surface roughness. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595309]
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000017484 7001_ $$0P:(DE-Juel1)VDB72747$$aMussler, G.$$b1$$uFZJ
000017484 7001_ $$0P:(DE-Juel1)VDB102215$$aKrumrain, J.$$b2$$uFZJ
000017484 7001_ $$0P:(DE-Juel1)VDB102216$$aHerdt, A.$$b3$$uFZJ
000017484 7001_ $$0P:(DE-Juel1)VDB62407$$aSuga, S.$$b4$$uFZJ
000017484 7001_ $$0P:(DE-Juel1)125588$$aGruetzmacher, D.$$b5$$uFZJ
000017484 7001_ $$0P:(DE-Juel1)130948$$aSchneider, C. M.$$b6$$uFZJ
000017484 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.3595309$$gVol. 98, p. 222503$$p222503$$q98<222503$$tApplied physics letters$$v98$$x0003-6951$$y2011
000017484 8567_ $$uhttp://dx.doi.org/10.1063/1.3595309
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