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@ARTICLE{Plucinski:17484,
      author       = {Plucinski, L. and Mussler, G. and Krumrain, J. and Herdt,
                      A. and Suga, S. and Gruetzmacher, D. and Schneider, C. M.},
      title        = {{R}obust surface electronic properties of topological
                      insulators: {B}i2{T}e3 films grown by molecular beam
                      epitaxy},
      journal      = {Applied physics letters},
      volume       = {98},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-17484},
      pages        = {222503},
      year         = {2011},
      note         = {We acknowledge stimulating discussions with Caitlin Morgan
                      on the course of editing the manuscript. Thanks are due to
                      NRW Research School "Research with Synchrotron Radiation"
                      funded by the Northrhine-Westphalia Ministry for Innovation,
                      Science, Research, and Technology (Grant No.
                      321.2-8.03.06-58782)},
      abstract     = {The surface electronic properties of the important
                      topological insulator Bi2Te3 are shown to be robust under an
                      extended surface preparation procedure, which includes
                      exposure to atmosphere and subsequent cleaning and
                      recrystallization by an optimized in situ sputter-anneal
                      procedure under ultrahigh vacuum conditions. Clear
                      Dirac-cone features are displayed in high-resolution
                      angle-resolved photoemission spectra from the resulting
                      samples, indicating remarkable insensitivity of the
                      topological surface state to cleaning-induced surface
                      roughness. (C) 2011 American Institute of Physics. [doi:
                      10.1063/1.3595309]},
      keywords     = {J (WoSType)},
      cin          = {PGI-6 / PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-6-20110106 / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000291405700041},
      doi          = {10.1063/1.3595309},
      url          = {https://juser.fz-juelich.de/record/17484},
}