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| Hauptseite > Publikationsdatenbank > Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy > print |
| Hauptseite > Publikationsdatenbank > Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy > print |
| 001 | 17484 | ||
| 005 | 20180208200409.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1063/1.3595309 |
| 024 | 7 | _ | |2 WOS |a WOS:000291405700041 |
| 024 | 7 | _ | |2 Handle |a 2128/7345 |
| 037 | _ | _ | |a PreJuSER-17484 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |0 P:(DE-Juel1)VDB83183 |a Plucinski, L. |b 0 |u FZJ |
| 245 | _ | _ | |a Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2011 |
| 300 | _ | _ | |a 222503 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |0 562 |a Applied Physics Letters |v 98 |x 0003-6951 |y 22 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a We acknowledge stimulating discussions with Caitlin Morgan on the course of editing the manuscript. Thanks are due to NRW Research School "Research with Synchrotron Radiation" funded by the Northrhine-Westphalia Ministry for Innovation, Science, Research, and Technology (Grant No. 321.2-8.03.06-58782) |
| 520 | _ | _ | |a The surface electronic properties of the important topological insulator Bi2Te3 are shown to be robust under an extended surface preparation procedure, which includes exposure to atmosphere and subsequent cleaning and recrystallization by an optimized in situ sputter-anneal procedure under ultrahigh vacuum conditions. Clear Dirac-cone features are displayed in high-resolution angle-resolved photoemission spectra from the resulting samples, indicating remarkable insensitivity of the topological surface state to cleaning-induced surface roughness. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595309] |
| 536 | _ | _ | |0 G:(DE-Juel1)FUEK412 |2 G:(DE-HGF) |a Grundlagen für zukünftige Informationstechnologien |c P42 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |2 WoSType |a J |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB72747 |a Mussler, G. |b 1 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB102215 |a Krumrain, J. |b 2 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB102216 |a Herdt, A. |b 3 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB62407 |a Suga, S. |b 4 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)125588 |a Gruetzmacher, D. |b 5 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)130948 |a Schneider, C. M. |b 6 |u FZJ |
| 773 | _ | _ | |0 PERI:(DE-600)1469436-0 |a 10.1063/1.3595309 |g Vol. 98, p. 222503 |p 222503 |q 98<222503 |t Applied physics letters |v 98 |x 0003-6951 |y 2011 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.3595309 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/17484/files/FZJ-17484.pdf |y Published under German "Allianz" Licensing conditions on 2011-06-01. Available in OpenAccess from 2011-06-01 |z Published final document. |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/17484/files/FZJ-17484.jpg?subformat=icon-1440 |x icon-1440 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/17484/files/FZJ-17484.jpg?subformat=icon-180 |x icon-180 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/17484/files/FZJ-17484.jpg?subformat=icon-640 |x icon-640 |
| 909 | C | O | |o oai:juser.fz-juelich.de:17484 |p openaire |p open_access |p driver |p VDB |p dnbdelivery |
| 913 | 1 | _ | |0 G:(DE-Juel1)FUEK412 |a DE-HGF |b Schlüsseltechnologien |k P42 |l Grundlagen für zukünftige Informationstechnologien (FIT) |v Grundlagen für zukünftige Informationstechnologien |x 0 |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-529H |2 G:(DE-HGF)POF3-500 |v Addenda |x 0 |
| 914 | 1 | _ | |y 2011 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 915 | _ | _ | |0 StatID:(DE-HGF)0510 |2 StatID |a OpenAccess |
| 915 | _ | _ | |0 StatID:(DE-HGF)0520 |2 StatID |a Allianz-OA |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-6-20110106 |g PGI |k PGI-6 |l Elektronische Eigenschaften |x 0 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |g PGI |k PGI-9 |l Halbleiter-Nanoelektronik |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)131959 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-6-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a JUWEL |
| 980 | _ | _ | |a FullTexts |
| 980 | 1 | _ | |a FullTexts |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
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