%0 Journal Article
%A Krumrain, J.
%A Mussler, G.
%A Borisova, S.
%A Stoica, T.
%A Plucinski, L.
%A Schneider, C. M.
%A Gruetzmacher, D.
%T MBE growth optimization of topological insulator Bi2Te3 films
%J Journal of crystal growth
%V 324
%@ 0022-0248
%C Amsterdam [u.a.]
%I Elsevier
%M PreJuSER-17485
%P 115 - 118
%D 2011
%Z Record converted from VDB: 12.11.2012
%X We investigated the growth of the topological insulator Bi2Te3 on Si(1 1 1) substrates by means of molecular-beam epitaxy (MBE). The substrate temperature as well as the Bi and Te beam-equivalent pressure (BEP) was varied in a large range. The structure and morphology of the layers were studied using X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM). The layer-by-layer growth mode with quintuple layer (QL) as an unit is accomplished on large plateaus if the MBE growth takes place in a Te overpressure. At carefully optimized MBE growth parameters, we obtained atomically smooth, single-crystal Bi2Te3 with large area single QL covering about 75% of the layer surface. Angular-resolved photoelectron spectroscopy reveals a linear energy dispersion of charge carriers at the surface, evidencing topologically insulating properties of the Bi2Te3 epilayers. (C) 2011 Elsevier B.V. All rights reserved.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000292362600019
%R 10.1016/j.jcrysgro.2011.03.008
%U https://juser.fz-juelich.de/record/17485