000017485 001__ 17485
000017485 005__ 20180208215647.0
000017485 0247_ $$2DOI$$a10.1016/j.jcrysgro.2011.03.008
000017485 0247_ $$2WOS$$aWOS:000292362600019
000017485 037__ $$aPreJuSER-17485
000017485 041__ $$aeng
000017485 082__ $$a540
000017485 084__ $$2WoS$$aCrystallography
000017485 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000017485 084__ $$2WoS$$aPhysics, Applied
000017485 1001_ $$0P:(DE-Juel1)VDB102215$$aKrumrain, J.$$b0$$uFZJ
000017485 245__ $$aMBE growth optimization of topological insulator Bi2Te3 films
000017485 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2011
000017485 300__ $$a115 - 118
000017485 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000017485 3367_ $$2DataCite$$aOutput Types/Journal article
000017485 3367_ $$00$$2EndNote$$aJournal Article
000017485 3367_ $$2BibTeX$$aARTICLE
000017485 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000017485 3367_ $$2DRIVER$$aarticle
000017485 440_0 $$03235$$aJournal of Crystal Growth$$v324$$x0022-0248
000017485 500__ $$3POF3_Assignment on 2016-02-29
000017485 500__ $$aRecord converted from VDB: 12.11.2012
000017485 520__ $$aWe investigated the growth of the topological insulator Bi2Te3 on Si(1 1 1) substrates by means of molecular-beam epitaxy (MBE). The substrate temperature as well as the Bi and Te beam-equivalent pressure (BEP) was varied in a large range. The structure and morphology of the layers were studied using X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM). The layer-by-layer growth mode with quintuple layer (QL) as an unit is accomplished on large plateaus if the MBE growth takes place in a Te overpressure. At carefully optimized MBE growth parameters, we obtained atomically smooth, single-crystal Bi2Te3 with large area single QL covering about 75% of the layer surface. Angular-resolved photoelectron spectroscopy reveals a linear energy dispersion of charge carriers at the surface, evidencing topologically insulating properties of the Bi2Te3 epilayers. (C) 2011 Elsevier B.V. All rights reserved.
000017485 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000017485 588__ $$aDataset connected to Web of Science
000017485 650_7 $$2WoSType$$aJ
000017485 65320 $$2Author$$aAtomic force microscopy
000017485 65320 $$2Author$$aCrystal structure
000017485 65320 $$2Author$$aX-ray diffraction
000017485 65320 $$2Author$$aMolecular beam epitaxy
000017485 65320 $$2Author$$aBismuth compounds
000017485 65320 $$2Author$$aTopological insulator
000017485 7001_ $$0P:(DE-Juel1)VDB72747$$aMussler, G.$$b1$$uFZJ
000017485 7001_ $$0P:(DE-Juel1)VDB84192$$aBorisova, S.$$b2$$uFZJ
000017485 7001_ $$0P:(DE-Juel1)VDB5575$$aStoica, T.$$b3$$uFZJ
000017485 7001_ $$0P:(DE-Juel1)VDB83183$$aPlucinski, L.$$b4$$uFZJ
000017485 7001_ $$0P:(DE-Juel1)130948$$aSchneider, C. M.$$b5$$uFZJ
000017485 7001_ $$0P:(DE-Juel1)125588$$aGruetzmacher, D.$$b6$$uFZJ
000017485 773__ $$0PERI:(DE-600)1466514-1$$a10.1016/j.jcrysgro.2011.03.008$$gVol. 324, p. 115 - 118$$p115 - 118$$q324<115 - 118$$tJournal of crystal growth$$v324$$x0022-0248$$y2011
000017485 8567_ $$uhttp://dx.doi.org/10.1016/j.jcrysgro.2011.03.008
000017485 909CO $$ooai:juser.fz-juelich.de:17485$$pVDB
000017485 9131_ $$0G:(DE-Juel1)FUEK412$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000017485 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000017485 9141_ $$y2011
000017485 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000017485 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$gPGI$$kPGI-6$$lElektronische Eigenschaften$$x0
000017485 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$gPGI$$kPGI-9$$lHalbleiter-Nanoelektronik$$x1
000017485 970__ $$aVDB:(DE-Juel1)131960
000017485 980__ $$aVDB
000017485 980__ $$aConvertedRecord
000017485 980__ $$ajournal
000017485 980__ $$aI:(DE-Juel1)PGI-6-20110106
000017485 980__ $$aI:(DE-Juel1)PGI-9-20110106
000017485 980__ $$aUNRESTRICTED
000017485 981__ $$aI:(DE-Juel1)PGI-9-20110106