TY  - JOUR
AU  - Krumrain, J.
AU  - Mussler, G.
AU  - Borisova, S.
AU  - Stoica, T.
AU  - Plucinski, L.
AU  - Schneider, C. M.
AU  - Gruetzmacher, D.
TI  - MBE growth optimization of topological insulator Bi2Te3 films
JO  - Journal of crystal growth
VL  - 324
SN  - 0022-0248
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - PreJuSER-17485
SP  - 115 - 118
PY  - 2011
N1  - Record converted from VDB: 12.11.2012
AB  - We investigated the growth of the topological insulator Bi2Te3 on Si(1 1 1) substrates by means of molecular-beam epitaxy (MBE). The substrate temperature as well as the Bi and Te beam-equivalent pressure (BEP) was varied in a large range. The structure and morphology of the layers were studied using X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM). The layer-by-layer growth mode with quintuple layer (QL) as an unit is accomplished on large plateaus if the MBE growth takes place in a Te overpressure. At carefully optimized MBE growth parameters, we obtained atomically smooth, single-crystal Bi2Te3 with large area single QL covering about 75% of the layer surface. Angular-resolved photoelectron spectroscopy reveals a linear energy dispersion of charge carriers at the surface, evidencing topologically insulating properties of the Bi2Te3 epilayers. (C) 2011 Elsevier B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000292362600019
DO  - DOI:10.1016/j.jcrysgro.2011.03.008
UR  - https://juser.fz-juelich.de/record/17485
ER  -