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@ARTICLE{Krumrain:17485,
      author       = {Krumrain, J. and Mussler, G. and Borisova, S. and Stoica,
                      T. and Plucinski, L. and Schneider, C. M. and Gruetzmacher,
                      D.},
      title        = {{MBE} growth optimization of topological insulator
                      {B}i2{T}e3 films},
      journal      = {Journal of crystal growth},
      volume       = {324},
      issn         = {0022-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-17485},
      pages        = {115 - 118},
      year         = {2011},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We investigated the growth of the topological insulator
                      Bi2Te3 on Si(1 1 1) substrates by means of molecular-beam
                      epitaxy (MBE). The substrate temperature as well as the Bi
                      and Te beam-equivalent pressure (BEP) was varied in a large
                      range. The structure and morphology of the layers were
                      studied using X-ray diffraction (XRD), X-ray reflectivity
                      (XRR) and atomic force microscopy (AFM). The layer-by-layer
                      growth mode with quintuple layer (QL) as an unit is
                      accomplished on large plateaus if the MBE growth takes place
                      in a Te overpressure. At carefully optimized MBE growth
                      parameters, we obtained atomically smooth, single-crystal
                      Bi2Te3 with large area single QL covering about $75\%$ of
                      the layer surface. Angular-resolved photoelectron
                      spectroscopy reveals a linear energy dispersion of charge
                      carriers at the surface, evidencing topologically insulating
                      properties of the Bi2Te3 epilayers. (C) 2011 Elsevier B.V.
                      All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {PGI-6 / PGI-9},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-6-20110106 / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Crystallography / Materials Science, Multidisciplinary /
                      Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000292362600019},
      doi          = {10.1016/j.jcrysgro.2011.03.008},
      url          = {https://juser.fz-juelich.de/record/17485},
}