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| Hauptseite > Publikationsdatenbank > MBE growth optimization of topological insulator Bi2Te3 films > print |
| Hauptseite > Publikationsdatenbank > MBE growth optimization of topological insulator Bi2Te3 films > print |
| 001 | 17485 | ||
| 005 | 20180208215647.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/j.jcrysgro.2011.03.008 |
| 024 | 7 | _ | |2 WOS |a WOS:000292362600019 |
| 037 | _ | _ | |a PreJuSER-17485 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 540 |
| 084 | _ | _ | |2 WoS |a Crystallography |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Krumrain, J. |b 0 |u FZJ |0 P:(DE-Juel1)VDB102215 |
| 245 | _ | _ | |a MBE growth optimization of topological insulator Bi2Te3 films |
| 260 | _ | _ | |a Amsterdam [u.a.] |b Elsevier |c 2011 |
| 300 | _ | _ | |a 115 - 118 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Journal of Crystal Growth |x 0022-0248 |0 3235 |v 324 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a We investigated the growth of the topological insulator Bi2Te3 on Si(1 1 1) substrates by means of molecular-beam epitaxy (MBE). The substrate temperature as well as the Bi and Te beam-equivalent pressure (BEP) was varied in a large range. The structure and morphology of the layers were studied using X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM). The layer-by-layer growth mode with quintuple layer (QL) as an unit is accomplished on large plateaus if the MBE growth takes place in a Te overpressure. At carefully optimized MBE growth parameters, we obtained atomically smooth, single-crystal Bi2Te3 with large area single QL covering about 75% of the layer surface. Angular-resolved photoelectron spectroscopy reveals a linear energy dispersion of charge carriers at the surface, evidencing topologically insulating properties of the Bi2Te3 epilayers. (C) 2011 Elsevier B.V. All rights reserved. |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a Atomic force microscopy |
| 653 | 2 | 0 | |2 Author |a Crystal structure |
| 653 | 2 | 0 | |2 Author |a X-ray diffraction |
| 653 | 2 | 0 | |2 Author |a Molecular beam epitaxy |
| 653 | 2 | 0 | |2 Author |a Bismuth compounds |
| 653 | 2 | 0 | |2 Author |a Topological insulator |
| 700 | 1 | _ | |a Mussler, G. |b 1 |u FZJ |0 P:(DE-Juel1)VDB72747 |
| 700 | 1 | _ | |a Borisova, S. |b 2 |u FZJ |0 P:(DE-Juel1)VDB84192 |
| 700 | 1 | _ | |a Stoica, T. |b 3 |u FZJ |0 P:(DE-Juel1)VDB5575 |
| 700 | 1 | _ | |a Plucinski, L. |b 4 |u FZJ |0 P:(DE-Juel1)VDB83183 |
| 700 | 1 | _ | |a Schneider, C. M. |b 5 |u FZJ |0 P:(DE-Juel1)130948 |
| 700 | 1 | _ | |a Gruetzmacher, D. |b 6 |u FZJ |0 P:(DE-Juel1)125588 |
| 773 | _ | _ | |a 10.1016/j.jcrysgro.2011.03.008 |g Vol. 324, p. 115 - 118 |p 115 - 118 |q 324<115 - 118 |0 PERI:(DE-600)1466514-1 |t Journal of crystal growth |v 324 |y 2011 |x 0022-0248 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.jcrysgro.2011.03.008 |
| 909 | C | O | |o oai:juser.fz-juelich.de:17485 |p VDB |
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| 914 | 1 | _ | |y 2011 |
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