% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Kim:18247,
      author       = {Kim, S.K. and Hoffmann-Eifert, S. and Reiner, M. and Waser,
                      R.},
      title        = {{R}elation between enhancement in growth and
                      thickness-dependent crystallization in {ALD} {T}i{O}2 thin
                      films},
      journal      = {Journal of the Electrochemical Society},
      volume       = {158},
      issn         = {0013-4651},
      address      = {Pennington, NJ},
      publisher    = {Electrochemical Society},
      reportid     = {PreJuSER-18247},
      pages        = {D6 - D9},
      year         = {2011},
      note         = {The authors thank Dr. U. Breuer for XRF analysis, Dr. S. Mi
                      for HRTEM analysis, Dr. M. Muller for support with contact
                      angle measurements, and M. Gebauer, M. Gerst, and H. John
                      for technical support. One of the authors (S. K. Kim)
                      acknowledges Alexander von Humboldt Stiftung (AvH) for
                      awarding him a research fellowship.},
      abstract     = {TiO2 films were grown by atomic layer deposition (ALD) with
                      Ti(O-i-Pr)(4) and H2O. Below a critical film thickness the
                      grown TiO2 films exhibited an amorphous structure. The
                      growth rate of the amorphous films was constant at about
                      0.055 nm/cycle irrespective of the susceptor temperature.
                      Films which exceeded the critical thickness showed a
                      polycrystalline structure. The growth rate of the thicker
                      crystallized films was higher by a factor of about 2
                      compared to the value of the thin amorphous films. In this
                      study it is shown that the abrupt increase in the growth
                      rate is caused by an increase in the density of hydroxyl
                      groups on the reaction surface rather than by a certain
                      surface roughening accompanying the crystallization process.
                      (c) 2010 The Electrochemical Society. [DOI:
                      10.1149/1.3507258] All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Electrochemistry / Materials Science, Coatings $\&$ Films},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000284697900028},
      doi          = {10.1149/1.3507258},
      url          = {https://juser.fz-juelich.de/record/18247},
}